Manufacturing method of semiconductor structure

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of high defect rate of semiconductors

Pending Publication Date: 2021-12-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for manufacturing a semiconductor structure to solve the technical problem of high semiconductor defective rate in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of semiconductor structure
  • Manufacturing method of semiconductor structure
  • Manufacturing method of semiconductor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0026] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a manufacturing method of a semiconductor structure, and relates to the technical field of semiconductor manufacturing. The method comprises the steps: providing a substrate with well injection completed; performing bigrid oxide deposition; performing silicon nitride deposition; and forming hydrophobic layers on the front surface, the side surface and at least one part of the back surface of the substrate on which the silicon nitride film is deposited. According to the technical scheme, after a proper hydrophobic layer is formed on the back surface of the wafer (namely the substrate), permeation of chemical liquid to the damaged position of the outermost coating of the wafer can be effectively reduced due to the hydrophobic function of the back surface of the wafer, so that fragments falling off from the coating on the back surface of the wafer are reduced or eliminated, the front surface of the wafer is not influenced by falling of the fragments, and the product yield of the wafer is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a semiconductor structure. Background technique [0002] Wafer (wafer) is the substrate (ie substrate) on which semiconductor transistors or integrated circuits are manufactured. Since the wafer is a crystalline material and its shape is circular, it is called a wafer. Wafer manufacturing needs to go through a variety of processes, such as double gate oxide process. In the prior art, during the wafer manufacturing process, small fragments are often found on the front side of the wafer, and these fragments greatly affect the quality of the wafer, resulting in a greatly increased defective rate of semiconductor manufacturing. Contents of the invention [0003] The purpose of the present invention is to provide a method for manufacturing a semiconductor structure to solve the technical problem of high defect rate of semiconductors i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/02
CPCH01L21/02016H01L21/0201
Inventor 金在植张成根林锺吉贺晓彬丁明正杨涛李俊峰王文武
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap