Ultraviolet LED epitaxial structure and preparation method and application thereof

An epitaxial structure and ultraviolet technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency of devices and affect commercialization, and achieve the effect of improving internal quantum efficiency, improving balance, and improving luminous efficiency.

Pending Publication Date: 2021-11-30
广州市众拓光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are still some technical bottlenecks in the research of ultraviolet LEDs, resulting in low luminous efficiency of the device, which affects its large-scale commercialization.

Method used

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  • Ultraviolet LED epitaxial structure and preparation method and application thereof
  • Ultraviolet LED epitaxial structure and preparation method and application thereof
  • Ultraviolet LED epitaxial structure and preparation method and application thereof

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Embodiment 1

[0037] An ultraviolet LED epitaxial structure, including a substrate, a buffer layer, an unintentionally doped layer, an N-type doped layer, a quantum well light-emitting layer, a P-type electron blocking layer, and a P-type AlGaN layer from bottom to top; the N-type The doped layer sequentially includes the first NAl from bottom to top a Ga 1-a N layer, second NAl b Ga 1-b N layer, the third NAl c Ga 1-c N layer and fourth NAl d Ga 1-d N layers. Where a=0.1, b=0.25, c=0.15, d=0.2.

[0038] The preparation method of the ultraviolet LED epitaxial structure comprises the following steps:

[0039] Step S1: preparing a substrate;

[0040] Step S2: growing a buffer layer on the substrate; the growth temperature of the buffer layer is 800° C., and the growth thickness is 15 nm;

[0041] Step S3: growing an unintentionally doped layer on the buffer layer; the growth temperature of the unintentionally doped layer is 1100° C., and the growth thickness is 2.0 μm;

[0042] Ste...

Embodiment 2

[0047] An ultraviolet LED epitaxial structure, including a substrate, a buffer layer, an unintentionally doped layer, an N-type doped layer, a quantum well light-emitting layer, a P-type electron blocking layer, and a P-type AlGaN layer from bottom to top; the N-type The doped layer sequentially includes the first NAl from bottom to top a Ga 1-a N layer, second NAl b Ga 1-b N layer, the third NAl c Ga 1-c N layer and fourth NAl d Ga 1-d N layers. Where a=0.1, b=0.3, c=0.15, d=0.25.

[0048] The preparation method of the ultraviolet LED epitaxial structure comprises the following steps:

[0049] Step S1: preparing a substrate;

[0050] Step S2: growing a buffer layer on the substrate; the growth temperature of the buffer layer is 900° C., and the growth thickness is 50 nm;

[0051] Step S3: growing an unintentionally doped layer on the buffer layer; the growth temperature of the unintentionally doped layer is 1100° C., and the growth thickness is 4.0 μm;

[0052] Ste...

Embodiment 3

[0057] An ultraviolet LED epitaxial structure, including a substrate, a buffer layer, an unintentionally doped layer, an N-type doped layer, a quantum well light-emitting layer, a P-type electron blocking layer, and a P-type AlGaN layer from bottom to top; the N-type The doped layer sequentially includes the first NAl from bottom to top a Ga 1-a N layer, second NAl b Ga 1-b N layer, the third NAl c Ga 1-c N layer and fourth NAl d Ga 1-d N layers. Where a=0.15, b=0.3, c=0.2, d=0.25.

[0058] The preparation method of the ultraviolet LED epitaxial structure comprises the following steps:

[0059] Step S1: preparing a substrate;

[0060] Step S2: growing a buffer layer on the substrate; the growth temperature of the buffer layer is 800° C., and the growth thickness is 15 nm;

[0061] Step S3: growing an unintentionally doped layer on the buffer layer; the growth temperature of the unintentionally doped layer is 1100° C., and the growth thickness is 2.0 μm;

[0062] Ste...

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Abstract

The invention relates to the technical field of light emitting diodes, in particular to an ultraviolet LED epitaxial structure and a preparation method and application thereof. The ultraviolet LED epitaxial structure sequentially comprises a substrate, a buffer layer, an unintentional doping layer, an N-type doping layer, a quantum well light-emitting layer, a P-type electron blocking layer and a P-type AlGaN layer from bottom to top, wherein the N-type doped layer sequentially comprises a first NAlaGa<1-a>N layer, a second NAlbGa<1-b>N layer, a third NAlcGa<1-c>N layer and a fourth NAldGa<1-d> N layer from bottom to top. The invention provides a novel N-type doping layer structure which can effectively adjust the migration efficiency of electrons, improve the distribution balance of the electrons and holes in an MQW region, effectively improve the recombination probability of the electrons and the holes, remarkably improve the internal quantum efficiency and greatly improve the luminous efficiency.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to an ultraviolet LED epitaxial structure and a preparation method and application thereof. Background technique [0002] Light-emitting diode (LED) is a commonly used light-emitting device, which releases energy and emits light through the recombination of electrons and holes. It is widely used in the field of lighting. Light-emitting diodes can efficiently convert electrical energy into light energy, and have a wide range of uses in modern society, such as lighting, flat panel displays, medical devices, etc. Ultraviolet light-emitting diodes based on semiconductor materials have the advantages of energy saving, environmental protection and long life, and have great application value in the fields of sterilization, medical treatment and biochemical detection. In recent years, semiconductor ultraviolet optoelectronic materials and devices have attracted more and more ...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/06H01L33/00
CPCH01L33/14H01L33/06H01L33/0075
Inventor 李国强
Owner 广州市众拓光电科技有限公司
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