Organic electroluminescent device and organic electroluminescent device
An electroluminescence device and electroluminescence technology, which are applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of low luminous brightness and color shift of red photonic pixels and green photonic pixels, and achieve the effect of increasing the control effect.
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Embodiment 1
[0056] An embodiment of the present invention provides an organic electroluminescent device, such as Figure 4 As shown, it includes a first electrode layer 1, a hole injection layer 2, a hole transport layer 3, an electron blocking layer 4, a light emitting layer 5, a hole blocking layer 6, an electron transport layer 7, and an electron injection layer 8 stacked in sequence. As well as the second electrode layer 9, the light-emitting layer 5 includes a host material and a guest material, and the first carrier functional layer is an electron blocking layer 4, which is doped with a guest material.
[0057] Wherein, the light emitting layer 5 is a red light emitting layer or a green light emitting layer, that is, this embodiment provides a red organic electroluminescent device and a green organic electroluminescent device;
[0058] The structure of the red light device is: ITO(100nm) / CuPc(20nm) / NPB(40nm) / TPD:Ir(piq) 3 (3%,65nm) / CBP:Ir(piq) 3 (3%, 30nm,) / NPB(5nm) / TPBi(40nm) / LiF...
Embodiment 2
[0061] The embodiment of the present invention provides an organic electroluminescent device, the structure of which is the same as that of embodiment 1, except that the hole blocking layer 6 is the second carrier functional layer, which is also doped with the guest material of the light emitting layer.
[0062] The structure of the red light device is: ITO(100nm) / CuPc(20nm) / NPB(40nm) / TPD:Ir(piq) 3 (3%,65nm) / CBP:Ir(piq) 3 (3%,30nm) / NPB:Ir(piq) 3 (3%,5nm) / TPBi(40nm) / LiF(1nm) / Mg:Ag(20%,15nm) / NPB(60nm);
[0063] The structure of the green light device is: ITO(100nm) / CuPc(20nm) / NPB(40nm) / TPD:Ir(ppy) 3 (10%,35nm) / CBP:Ir(ppy) 3 (10%,30nm) / NPB:Ir(ppy) 3 (10%, 5nm) / TPBi(40nm) / LiF(1nm) / Mg:Ag(20%, 15nm) / NPB(60nm).
Embodiment 3
[0065] The embodiment of the present invention provides an organic electroluminescent device, the structure of which is the same as that of embodiment 1, except that the electron blocking layer 4 is not included, and the first carrier functional layer is a hole transport layer.
[0066] The structure of the red light device is: ITO(100nm) / CuPc(85nm) / NPB:Ir(piq) 3 (3%,40nm) / CBP:Ir(piq) 3(3%, 30nm) / NPB(5nm) / TPBi(40nm) / LiF(1nm) / Mg:Ag(20%, 15nm) / NPB(60nm);
[0067] The structure of the green light device is: / ITO(100nm) / CuPc(55nm) / NPB:Ir(ppy) 3 (10%,40nm) / CBP:Ir(ppy) 3 (10%, 30nm) / NPB(5nm) / TPBi(40nm) / LiF(1nm) / Mg:Ag(20%, 15nm) / NPB(60nm).
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