Formation method of semiconductor device

Abstract

The invention discloses a formation method of a semiconductor device. The method comprises the steps of forming a first barrier layer; forming a second barrier layer at the junction of a first combination area and a second combination area; taking the second barrier layer as a mask, and forming a first gate contact opening located on a pull gate structure in the dielectric layer at two sides of the second barrier layer; forming a first plug opening in a first extension region in the dielectric layer by taking the first barrier layer and the second barrier layer as masks; removing the second barrier layer; and forming a second plug opening positioned on a second extension region and a third extension region and a second gate contact opening positioned on a transmission gate structure in the dielectric layer. According to the invention, the short circuit of a first plug on the first combination region and a first plug on the second combination region is avoided, the positions of the first barrier layer defining the position of the second plug opening and the second barrier layer are not mutually limited, and the process difficulty is facilitated to be reduced.

Description

Technical field [0001] The present invention relates to semiconductor technology, and particularly relates to a method of forming a semiconductor device. Background technique [0002] In order to follow the development of Morgan's law, and to meet people of various electronic products have a smaller size, taking up less space, more portable and operational requirements, semiconductor manufacturing technology is a high degree of integration, low power consumption, high performance as the goal of rapid development. The current semiconductor industry, the integrated circuit products can be divided into three types: digital circuitry, analog circuitry, digital-analog mixed circuit, wherein the memory is a very important type of digital circuits. In recent years, with the development of semiconductor technology, we have been developed in terms of memory random access memory and powerful data storage memory. A static random access memory (Static Random-Access Memory, SRAM) as represent...

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem of poor performance of semiconductor devices and high process difficulty in the prior art

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