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Device for corroding silicon carbide wafer by alkali steam

A technology of silicon carbide and alkali steam, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of difficult handling of alkaline steam and high temperature, and achieve the goals of reducing heat loss, rapid response, and guaranteed corrosion effect Effect

Active Publication Date: 2021-10-26
ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the high temperature required for alkaline steam corrosion and the difficulty in handling alkaline steam, there is currently no special corrosion device for this type of work.

Method used

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  • Device for corroding silicon carbide wafer by alkali steam
  • Device for corroding silicon carbide wafer by alkali steam
  • Device for corroding silicon carbide wafer by alkali steam

Examples

Experimental program
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Embodiment 2

[0064] The difference between this embodiment and Embodiment 1 is that the reaction component 11 is only provided with an opening at one end, and a single pipe plug 5 is used to seal the opening.

[0065] A method of use of the present invention: first place a plurality of silicon carbide wafers to be etched in the slot 7 of the silicon carbide wafer mounting part 6, and put the silicon carbide wafer mounting part 6 into the steam chamber of the reaction part 1 2. Inject the alkaline solution into the corrosion-resistant boat 3 and put it into the steam chamber 2, and fill the condensation zone 8 and the reaction zone 9 of the pipe plug 5 with corrosion-resistant porous insulation materials and porous insulation materials that are easy to react with alkaline steam, respectively Then the pipe plug 5 is installed on the reaction part 1, thereby sealing the reaction part 1; finally, the reaction part will be placed in the tube furnace, and the tube furnace is opened, and the tube ...

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Abstract

The invention discloses a device for corroding a silicon carbide wafer by alkali steam, and the device comprises a reaction part comprising a silicon wafer installation part and a corrosion-resistant cavity, a heating part connected with the reaction part and used for heating the corrosion-resistant cavity, and a plugging part comprising a first pipe plug and a second pipe plug. By arranging the pipe plugs, the reaction part is sealed, and the corrosion effect is guaranteed; and by arranging a condensation area and a reaction area on each pipe plug, absorption and reaction of high-temperature alkaline steam are achieved, and the influence on human health caused by the fact that the alkaline steam is diffused into air is reduced.

Description

technical field [0001] The invention relates to the field of silicon carbide wafer processing, in particular to a device for corroding silicon carbide wafers with alkali vapor. Background technique [0002] Silicon carbide is one of the most widely researched third-generation semiconductor materials at present. It has good application prospects in photovoltaics, new energy vehicles, smart grids and other fields. Related research and products are continuously launched, with good economic benefits and high application value. [0003] An important problem restricting the application of silicon carbide devices at present is wafer defects. Through the continuous efforts of scientific research and industry, defects such as inclusions, voids, and polytypes of high-quality silicon carbide wafers have been completely eliminated, and defects such as micropipes and dislocations have become the focus of attention. Micropipes will cause direct failure of devices, and dislocations such a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/12C30B29/36
CPCC30B33/12C30B29/36
Inventor 李佳君王蓉罗昊朱如忠皮孝东杨德仁
Owner ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
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