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Asymmetric fast thyristor

A thyristor, asymmetric technology, applied in the direction of thyristor, electrical components, circuits, etc., can solve the problems of low dv/dt off time, low di/dt, large on-state voltage drop, etc., to improve stability and reliability. , The effect of reducing on-state voltage drop and low reverse blocking voltage

Pending Publication Date: 2021-10-15
西安派瑞功率半导体变流技术股份有限公司
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  • Claims
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Problems solved by technology

[0004] The purpose of the present invention is to provide an asymmetric fast thyristor, which solves the problems of large on-state voltage drop, small flow capacity, low di / dt, low dv / dt and long off-time of traditional fast thyristors due to thick chips

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Embodiment Construction

[0022] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0023] According to the theory of power semiconductors, for a specific blocking voltage, a silicon single crystal with a specific resistivity needs to be used, and a PN junction of a certain thickness needs to be formed in order to form a space charge layer of a specific width to withstand the blocking voltage. Asymmetric fast thyristors use different forward and reverse blocking voltages and require different PN junction thicknesses, so that the thickness of the chip is greatly reduced, the on-state voltage drop is reduced, the flow capacity is improved, and the di / dt is improved. and dv / dt capability shorten the off time.

[0024] figure 1 It is a sectional view of a four-layer three-terminal symmetrical fast thyristor in the prior art. The four layers refer to the P1 layer, the N1 layer, the P2 layer, and the N2 layer; the three terminals...

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Abstract

The invention relates to an asymmetric fast thyristor which is composed of four layers and three ends, wherein the four layers are respectively a P1 layer, an N1 layer, a P2 layer and an N2 layer, and the three ends are respectively a G end, a K end and an A end. The asymmetric fast thyristor is structurally provided with a central gate pole, an amplification gate pole, an amplification gate pole extension branch, a cathode, a table top, a central isolation groove and an isolation groove, different P1 and P2 layers are designed according to different forward and reverse blocking voltages, and because the P1 layer is thinner, the on-state voltage drop of the thyristor is reduced, the through-current capacity is improved, the dv / dt and di / dt tolerance is improved; particularly, due to the fact that a P1 area is thinner, electrons can directly penetrate through an anode junction to disappear, so that the turn-off time is greatly shortened; the thyristor is widely applied to the intermediate-frequency power electronic devices, and the reliability and stability of the devices are improved.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, relates to the field of intermediate frequency power switching devices, and in particular relates to an asymmetric fast thyristor. Background technique [0002] In some application fields, such as intermediate frequency electronic devices (frequency between 300HZ-800HZ), fast thyristors must be used, otherwise the thyristors will immediately receive a sine wave voltage during the turn-off recovery period, which will cause turn-off failure and fail to realize power. Effective control of electrical power by semiconductor devices. [0003] At present, the fast thyristors manufactured by the existing domestic technology have symmetrical forward and reverse blocking voltages, and the forward and reverse PN junctions are deep, such as figure 1 As shown, the chip is thicker, the on-state voltage drop is large, the flow capacity is low, the di / dt and dv / dt are low, and the off time i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/74
CPCH01L29/7432
Inventor 高山城赵涛张猛范晓波赵卫
Owner 西安派瑞功率半导体变流技术股份有限公司
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