Device and method for improving uniformity of electroplated film

A technology of film uniformity and electroplating solution, which is applied in the direction of circuits, electrolytic components, electrolytic processes, etc., can solve complex and cumbersome problems, unsatisfactory effects, etc., and achieve the effect of improving film uniformity and improving film uniformity

Active Publication Date: 2021-10-12
SIEN QINGDAO INTEGRATED CIRCUITS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006]However, the implementation of the above-mentioned technical means is complicated and cumbersome, and the effect obtained is not ideal

Method used

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  • Device and method for improving uniformity of electroplated film
  • Device and method for improving uniformity of electroplated film

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Embodiment Construction

[0032] The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0033] It should be noted that terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description and are not used to limit this specification. The practicable scope of the invention and the change or adjustment of its relative relationship shall also be regarded as the practicable scope of the present invention without any substantial change in the technical content.

[0034] A device for improving the uniformity of an electroplating film, comprising:

[0035] External cavity 1;

[0036] A cathode 3 is provided on the upper part of the outer cavity, and the cathode is connected to the wafer 10;

[0037] A rotating magnetic field generating ...

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Abstract

The invention discloses a device and a method for improving the uniformity of an electroplated film. The device comprises an outer cavity; a cathode is arranged on the upper part in the outer cavity and is connected with a wafer; a rotating magnetic field generating unit is arranged above the wafer, and the rotating magnetic field generating unit is used for generating a rotating magnetic field; an anode chamber is formed in the bottom in the outer cavity, an anode is arranged in the anode chamber, and a diffusion film is arranged at the top of the anode chamber. The method comprises the following steps that a rotating magnetic field is formed; target ions in the electroplating liquid are subjected to the action of the rotating magnetic field in the electroplating process, and spiral current is formed on the surface of the wafer; and the equipment comprises the device and / or the device for implementing the method. The technical problem that the uniformity of films at the center and the edge of the wafer is different in the electroplating process is solved.

Description

technical field [0001] The invention relates to the technical field of thin films in semiconductor device technology, in particular to a device and method for improving the uniformity of electroplating thin films. Background technique [0002] With the improvement of semiconductor device process technology, copper has replaced aluminum or aluminum alloy as an important material for semiconductor device wiring. The requirement for a void-free copper fill is also increasing, so it is becoming more and more challenging to improve the uniformity of the copper film. [0003] However, in the actual ECP (Electrochemical Plating, electrochemical coating) process, the electric field in the small radius of curvature (trend angle) is very strong, which can easily cause a gap between the via hole and the trench; and because the resistance in the center of the wafer is greater than Resistance at the edge of the wafer, so the current density at the center of the wafer is lower than at th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D5/00C25D7/12C25D17/00
CPCC25D7/12C25D17/00
Inventor 孟昭生薛亚楠贾玉杰
Owner SIEN QINGDAO INTEGRATED CIRCUITS CO LTD
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