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Method for detecting change trend of crystal growth interface in real time in Czochralski method system

A technology of crystal growth and changing trend, applied in measurement devices, electromagnetic measurement devices, electric/magnetic profile/curvature measurement, etc., can solve problems such as limited field of view, observation hole size, inability to observe the growth interface, and inability to judge the growth interface.

Active Publication Date: 2021-09-28
SUN YAT SEN UNIV
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  • Abstract
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Problems solved by technology

[0004] However, none of the above three methods can effectively monitor the changes of the growth interface.
The field of view of the CCD method is often limited by the size of the observation hole, and since most crystals are opaque after melting, the growth interface cannot be observed through the CCD
According to the load cell and the pulling speed, only the diameter of the crystal can be estimated, but it is impossible to judge how the growth interface changes, and the weight change caused by the interface change will even interfere with the calculation of the crystal diameter

Method used

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  • Method for detecting change trend of crystal growth interface in real time in Czochralski method system
  • Method for detecting change trend of crystal growth interface in real time in Czochralski method system
  • Method for detecting change trend of crystal growth interface in real time in Czochralski method system

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Embodiment 1

[0058] In this embodiment, the method described in the present invention is used to grow lithium niobate crystals with the same composition.

[0059] Generally, the growth of lithium niobate crystals by the pulling method is divided into several stages: crystallization, necking, shouldering, equal diameter and finishing. In this embodiment, in order to eliminate the interference of crystal diameter changes and seed crystal cold end temperature changes, more To illustrate the effectiveness of the method of the present invention, in the equal diameter stage, stop pulling, change the crystal rotation speed, and use the data obtained under this condition to introduce the specific use of the present invention.

[0060] In this embodiment, the crystal is grown to the isodiametric stage at a growth rate of 3 mm / h and a rotation rate of 15 rpm. After entering the isometric stage, stop pulling the crystal. After about 1 hour, when the shape of the crystal interface is stable, calculat...

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Abstract

The invention relates to a method for detecting the change trend of a crystal growth interface in real time in a Czochralski method system. The method comprises the following steps of in the crystal growth process, detecting the interface phase intrinsic electromotive force GEMF in real time, calculating the difference value or the ratio of the rising time and the falling time of the interface phase intrinsic electromotive force GEMF at intervals, and judging the change trend of the crystal growth interface in real time according to the difference value or the ratio. According to the method, the change of the growth interface is predicted based on the change of the relationship between the rising time and the falling time of the interface phase intrinsic electromotive force GEMF, and the change trend of the crystal growth interface can be timely and accurately detected.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a method for real-time detection of the crystal growth interface change trend in a pulling method system. Background technique [0002] The pulling method is a mature crystal growth method of the melt method. The (artificial) crystal grown by this method has a wide range of applications in various fields, such as the substrate of integrated circuits, solar panels for photovoltaic power generation, excitation media for lasers, particle The scintillator of the detector, and the surface acoustic wave filter, etc. In the process of crystal growth by pulling method, the shape of the growth interface has a crucial influence on the quality of the crystal. Generally, the interface can be divided into three types: flat, concave, and convex, and the flat interface is generally an ideal growth interface. However, due to the change of temperature field and crystal shape (diameter an...

Claims

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Application Information

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IPC IPC(8): G01N27/00G01B7/28
CPCG01N27/00G01B7/28Y02E10/50
Inventor 王彪王文佳朱允中
Owner SUN YAT SEN UNIV
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