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N-type bismuth telluride-based room-temperature thermoelectric material and preparation method thereof

A technology of bismuth telluride-based chamber and electrical material, which is applied in the directions of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc., can solve the problems of low device service life and yield, mismatch of application temperature range, etc. Achieve the effect of matching mechanical mechanics, improving service life and yield

Active Publication Date: 2021-09-21
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide an n-type bismuth telluride-based room temperature thermoelectric material and its preparation method, aiming at solving the mismatch between the application temperature regions of the existing p-type thermoelectric materials and n-type thermoelectric materials, The problem of low device life and yield when used for room temperature solid-state refrigeration

Method used

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  • N-type bismuth telluride-based room-temperature thermoelectric material and preparation method thereof
  • N-type bismuth telluride-based room-temperature thermoelectric material and preparation method thereof
  • N-type bismuth telluride-based room-temperature thermoelectric material and preparation method thereof

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Embodiment 1

[0069] n-type Bi 2-x Sb x Te 3 Preparation of room temperature thermoelectric materials

[0070] According to the chemical formula Bi 2-x Sb x Te 3 The stoichiometric ratio of each element in the formula is to weigh the corresponding mass Bi Metal block, Sb metal block, Te metal block. Then the Sb metal block is put into the quartz tube, the Te metal block is put into the quartz tube, and finally the Bi metal block is put into the quartz tube, vacuumized and then sealed with a hydrogen flame, then it is vertical (quartz tube From bottom to top, Sb metal block, Te metal block, Bi metal block) were placed in a high-temperature box-type resistance furnace, and the temperature was gradually raised from room temperature to 650 °C at a rate of 2 °C / min, kept for 2 hours, and then heated at 4 °C The heating rate is raised to 900°C for 10 hours, and the alloy ingot is obtained after cooling. Then alloy ingots, 1 steel ball with a diameter of 15mm, 3 steel balls with a diameter...

Embodiment 2

[0072] n-type Bi 1.5 Sb 0.5 Te 3 Preparation of room temperature thermoelectric materials

[0073] According to the chemical formula Bi 2-x Sb x Te 3 The stoichiometric ratio of each element is to weigh the corresponding mass of Bi metal block, Sb metal block and Te metal block according to the molar ratio of 1.5:0.5:3. Then the Sb metal block is put into the quartz tube, the Te metal block is put into the quartz tube, and finally the Bi metal block is put into the quartz tube, vacuumized and then sealed with a hydrogen flame, then it is vertical (quartz tube From bottom to top, Sb metal block, Te metal block, Bi metal block) were placed in a high-temperature box-type resistance furnace, and the temperature was gradually raised from room temperature to 650 °C at a rate of 2 °C / min, kept for 2 hours, and then heated at 4 °C The heating rate is raised to 900°C for 10 hours, and the alloy ingot is obtained after cooling. Then alloy ingots, 1 steel ball with a diameter of 1...

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Abstract

The invention discloses an n-type bismuth telluride-based room-temperature thermoelectric material and a preparation method thereof. The chemical formula of the n-type bismuth telluride-based room-temperature thermoelectric material is Bi2-xSbxTe3, and x is equal to 0-1.3. The n-type Bi2-xSbxTe3 thermoelectric material has a better thermoelectric figure of merit near the room temperature, and the n-type Bi2-xSbxTe3 and the p-type Bi2-xSbxTe3 have the same constituent elements, so that the n-type Bi2-xSbxTe3 and the p-type Bi2-xSbxTe3 are matched in application temperature zones and are better matched in mechanical mechanics, the service life of a thermoelectric device can be greatly enhanced, and the yield rate can also be greatly enhanced. The preparation method provided by the invention is simple, low in cost and good in repeatability.

Description

technical field [0001] The invention relates to the field of thermoelectric materials, in particular to an n-type bismuth telluride-based room temperature thermoelectric material and a preparation method thereof. Background technique [0002] The global energy consumption is huge, and the existing energy utilization efficiency is low, and most of the energy is wasted in the form of waste heat. Thermoelectric materials, as a new energy material that can directly convert thermal energy into electrical energy, have attracted extensive attention. [0003] Thermoelectric materials are materials that utilize three kinds of thermoelectric effects to realize mutual conversion of electric energy and thermal energy. A thermoelectric device is a device composed of p-type and n-type thermocouples connected in thermal parallel and electrically connected in series. Bismuth telluride is the earliest thermoelectric material discovered and studied for the longest time in the field of thermo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/14H01L35/16H01L35/34H10N10/851H10N10/01H10N10/852
CPCH10N10/851H10N10/852H10N10/01
Inventor 胡利鹏周延杰李均钦刘福生张朝华敖伟琴
Owner SHENZHEN UNIV
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