A detection method and device for crystal growth interface shape based on pulling method

A technology of crystal growth and detection method, which is applied in the directions of crystal growth, single crystal growth, self-melting liquid pulling method, etc.

Active Publication Date: 2022-05-20
SUN YAT SEN UNIV
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Problems solved by technology

[0005] Based on the above discussion, it can be concluded that the technology of real-time detection of crystal growth interface shape is of great help to crystal development and production; however, there is still no technical report on real-time detection of interface shape based on the pulling method crystal growth

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  • A detection method and device for crystal growth interface shape based on pulling method
  • A detection method and device for crystal growth interface shape based on pulling method

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Embodiment 1

[0048] Using the detection method and device of the present invention, the shape of the growth interface during the growth of lithium niobate crystals can be detected in real time, combined with figure 1 and figure 2 Be explained.

[0049] via figure 1 The four leading wires numbered a, b, c and d shown in the figure lead out the electrical signals of the seed crystal temperature and the interface electromotive force at the end of the constantly rotating and rising high-temperature seed crystal, and display them in the thermometer and voltmeter respectively in real time , record, summarize, plot into figure 2 (with the seed temperature T as the horizontal axis and the interface electromotive force U as the vertical axis) T-U curve. The whole process of crystal growth by the pulling method includes six stages in sequence: heating, crystal dropping, shouldering, equal diameter, pulling off, and cooling. The detection method of the present invention is mainly used in the two...

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Abstract

The invention relates to a method for detecting the shape of the crystal growth interface based on the pulling method. The detection method collects the temperature T of the seed crystal and the electromotive force U of the interface at the same time during the crystal growth process, and obtains the change of the electromotive force U of the interface with the temperature T of the seed crystal. T-U curve, by observing the deviation between the T-U curve and the reference line to judge the change trend of the shape of the crystal growth interface in real time; the reference line is through the starting point of the T-U curve, and the slope is the crystal The straight line for the Seebeck coefficient. The invention also relates to devices used in said method. The detection method of the present invention can detect the change trend of the shape of the crystal growth interface in real time during the crystal growth process, and can be applied to the pulling method growth of various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet, etc. equipment.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a method and device for detecting the shape of a crystal growth interface based on a pulling method. Background technique [0002] The Czochralski method (pulling method) is the main method for preparing single crystals in the field of crystal production. Worldwide, the equipment of this method accounts for more than 90%. The crystal category covers most semiconductor crystals, laser crystals and scintillation crystals such as monocrystalline silicon, sapphire, lithium niobate, and YAG. It is almost large-scale single crystal growth. , synonymous with production methods. The pulling method also includes many derivative methods, including the Kyroplasty method, the guided mold method, the heat exchange method, etc., and its basic structure and physical process are all derived from the pulling method. [0003] In the current pulling method growth equipment, the main (or even the onl...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/22
CPCC30B15/22
Inventor 朱允中王彪王文佳
Owner SUN YAT SEN UNIV
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