Flash memory erasure interrupt recovery test method and device, electronic equipment and storage medium

Abstract

The invention discloses a flash memory erasure interrupt recovery test method and device, electronic equipment and a storage medium, and the method comprises the following steps: writing first data information into a non-operation area in a flash memory; writing second data information into an operation area in the flash memory; sequentially and circularly subjecting the selected sector of the operation area to the cyclic operation of erasing, blank checking, programming and checking, interrupting and recovering the erasing operation according to a set time interval in the erasing process, and detecting and recording whether the first data information of the non-operation area is changed or not at intervals; and when the cyclically executed operation of the selected sector reaches a set cycle index, ending the cycle. According to the method, the flash memory chip is cyclically tested for multiple times, and interruption and recovery operations cover the whole erasing process, so that the test data is representative, the performance of the flash memory chip can be accurately and effectively reflected, and meanwhile, the influence of erasing interruption and recovery operation accumulation on data in a non-operation area can be effectively and clearly reflected.

Description

technical field [0001] The present application relates to the field of chip technology, in particular, to a flash memory erasing interrupt recovery test method, device, electronic equipment and storage medium. Background technique [0002] Nor Flash usually has two functions: storing program code and storing data. Nor Flash mainly includes three data operations: data reading, data programming and data erasing. The XIP (in-chip execution) operation of the CPU on the Flash is realized by sending a read command to the Flash to read the code stored in the Flash. The process of CPU storing data in Flash is as follows: first, it needs to send an erase command to clear a certain block of Flash, then send a programming command to write user data to a certain page of the block, and finally send a read command to read and verify the data. Usually erasing and programming operations take a certain amount of time. During the operation, Flash cannot respond to other commands except for ...

AI Technical Summary

Problems solved by technology

[0005] 1. Generally, the erasure operation is randomly interrupted. The interruption time point cannot ensure that all time segments of the erasure algorithm are covered, and there is a risk of incomplete verification, that is, the impact of erasure interruption and recovery operations on the chip cannot be fully and effectively reflected;

[0006] 2. The impact of erasure interruption and recovery operations on the data in the non-operating area is not detected;

[0007] 3. In fact, the erase interrupt recovery operation may affect the establishment and maintenance of the internal voltage of the Flash, and the traditional method generally uses a lower frequency for testing, and the low frequency is difficult to detect the problem of the flash memory chip, that is, it cannot fully reflect the erase interrupt , The impact of the recovery operation on the chip

[0008] For the above problems, there is no effective technical solution

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