Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Driving circuit containing multi-stage NPN (Negative-Positive-Negative) transistors

A technology for driving circuits and transistors, which is applied in the field of circuits and can solve problems such as large switching losses and large turn-off delays

Pending Publication Date: 2021-09-10
FREMONT MICRO DEVICES SHENZHEN LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The main purpose of the present invention is to provide a drive circuit containing multi-stage NPN transistors, aiming to solve the technical problems of the Darlington transistor drive circuit in the prior art, which have a large turn-off delay and a large switching loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Driving circuit containing multi-stage NPN (Negative-Positive-Negative) transistors
  • Driving circuit containing multi-stage NPN (Negative-Positive-Negative) transistors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0019] refer to figure 1 , figure 1 It is a structural schematic diagram of a Darlington triode driving circuit in the prior art. From figure 1 It can be seen that the existing Darlington transistor has only 3 pins, namely B (base), C (collector), E (emitter), and two NPN transistors Q1 and Q2; R1 and R2 are relatively High value resistors. And Ib*R1>Vbe(on), otherwise the driving current Ib will not be able to turn on the Darlington transistor. Since the storage time delay of the triode is relatively large, the turn-off delays of each triode in the existing Darlington triode driving circuit are t1 and t2 respectively. When the NPN transistor Q1 is turned off, the base-collector charge can be discharged through K1, and the NPN transistor Q2 can only be discharged through K1 through the series resistor R1, so t2 i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a driving circuit containing multistage NPN transistors. The driving circuit comprises N NPN transistors, N is a positive integer greater than or equal to 2, the emitter of the front NPN transistor in two adjacent NPN transistors is connected with the base of the rear NPN transistor, the collectors of all the NPN transistors are connected together and lead out a lead-out pin, the emitter of the backmost NPN transistor leads out another lead-out pin, the base of each NPN transistor leads out a control lead-out pin, the control lead-out pin corresponding to each NPN transistor is connected with a base switching device corresponding to each NPN transistor, each base switching device is connected with the logic circuit, and each base switching device is connected with the reference ground. According to the invention, the multi-stage NPN transistors can be driven, the turn-off delay of the multi-stage NPN transistor is short, and the switching loss is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of circuits, in particular to a drive circuit with multi-level NPN transistors. Background technique [0002] In the prior art, the turn-off delays of each transistor in the Darlington transistor drive circuit are t1 and t2 respectively, wherein the base-collector charges of the NPN transistor Q1 can be discharged through K1 when the NPN transistor Q1 is turned off, but the NPN transistor Q2 only It can be discharged through K1 after passing through the series resistance, so t2 is much larger than t1, which leads to a large turn-off delay of the entire Darlington transistor drive circuit, and produces a large switching loss, which limits the Darlington transistor drive circuit. Application in high power switching power supply. Contents of the invention [0003] The main purpose of the present invention is to provide a drive circuit with multi-stage NPN transistors, aiming to solve the technical problems o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02M1/088
CPCH02M1/088
Inventor 黄冲黄裕泉许如柏
Owner FREMONT MICRO DEVICES SHENZHEN LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com