Semiconductor device and heat sink bonding method

Abstract

The invention provides a semiconductor device and a heat sink bonding method, and relates to the technical field of semiconductors, and the method comprises the steps: forming an epitaxial layer on a substrate, wherein the epitaxial layer forms at least one current injection region and non-current injection regions located on the two sides of the current injection region, and an isolation region is formed between the current injection region and the non-current injection region; forming a metal layer on the epitaxial layer, wherein the metal layer covers the current injection region, the non-current injection region and the isolation region; forming a plurality of electric conduction and heat conduction structures on the metal layer, forming gaps between adjacent electric conduction and heat conduction structures, and arranging a plurality of electric conduction and heat conduction structures on each non-current injection region; forming a welding layer on the plurality of conductive and heat-conducting structures, wherein the welding layer covers the conductive and heat-conducting structures, the gap and the metal layer; and welding the heat sink and the welding layer. The electric conduction and heat conduction structure ensures that the current injection region is not stressed, and welding stress concentration is reduced when the heat sink is welded; the formation of the metal layer and the conductive and heat-conducting structure reduces the welding stress of the heat sink and the semiconductor device, and reduces or avoids local distortion of the semiconductor device caused by welding.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a method for bonding a semiconductor device and a heat sink. Background technique [0002] Semiconductor devices will generate heat when they work. In order to make the semiconductor devices dissipate heat in time to ensure the performance of semiconductor devices, heat sinks are often used to dissipate heat from semiconductor devices, and the semiconductor devices and heat sinks are bonded by welding to achieve the purpose of semiconductor device heat dissipation. . [0003] However, the general semiconductor device is thin and slender. When it is bonded to the heat sink, some stress generated by the welding of the semiconductor device and the heat sink can easily cause local distortion of the semiconductor device. After the semiconductor device is twisted, it will affect the polarization performance of the semiconductor device. In severe cases, it may also cau...

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Problems solved by technology

[0003] However, the general semiconductor device is thin and slender. When it is bonded to the heat sink, some stress generated by the welding of the semiconductor device and the heat sink can easily cause local distortion of the semiconductor device. After the semiconductor device is twisted, it will affect the polarization performance of the semiconductor device. , in severe cases, it may also lead to cracks or breakage of semiconductor devices

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