Film layer removing process for silicon-based OLED micro-display device

Abstract

The invention discloses a film layer removing process for a silicon-based OLED micro-display device, and belongs to the technical field of silicon-based OLED micro-display device preparation. The film layer removing process comprises the following steps of feeding a wafer to be processed, positioning the wafer on a work platform, and completing laser alignment; starting a laser system, conducting single-point multi-time laser operation on the target film layer to remove the target film layer, and conducting nitrogen purging on an operation area; conducting wet cleaning operation on the wafer of which the film layer is removed by the laser; and conducting baking operation on the cleaned wafer. The film layer removing process has the beneficial effects that the film layer removing process is simple, the film layer removing efficiency is high, poor etching and packaging layer damage abnormity can be avoided, the product yield is improved, and meanwhile, the process cost is reduced.

Description

technical field [0001] The invention relates to the technical field of preparation of a silicon-based OLED microdisplay device, in particular to a process for removing a film layer of a silicon-based OLED microdisplay device. Background technique [0002] At present, due to the vigorous development of the micro-display industry, silicon-based OLED micro-display devices have received extensive attention, and the methods for their fabrication are also being continuously explored and improved. In the manufacturing process of silicon-based OLED micro-display devices, in the display module preparation section, it is necessary to attach each die in the wafer to a PCB or FPC. The base layer is exposed, and the remaining film layers cannot be placed. [0003] Therefore, before the module process, it is necessary to remove the high-temperature SiOx film layer and the packaging film layer above the wiring area. The process of removing the above film layer is currently conventionally...

AI Technical Summary

Problems solved by technology

The process of removing the above film layer is currently conventionally removed by dry etching, that is, through coating, exposure, development, curing, dry etching, dry degumming, cleaning, baking and other processes, the film layer is removed and delivered to the module Wire bonding, this process is cumbersome and complicated. In actual production, it often occurs that the module cannot be wired due to uneven etching and over-etching, and TAMH solution or KOH solution is used for developing and other processes, which is easy to damage the packaging layer, resulting in In addition, the upper film layer of the aluminum base layer of the silicon-based OLED microdisplay device is a dense SiOx film layer, and the thickness of the encapsulation layer currently used is relatively large. During dry etching, the dry etching machine is occupied. It takes a lot of time, which accounts for 70% of the dry etching process of the entire silicon-based OLED microdisplay device, occupies a large number of equipment, and has low film removal efficiency and high cost.

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