Anodic bonding equipment

Abstract

The invention discloses anodic bonding equipment, and belongs to the technical field of anodic bonding, the anodic bonding equipment comprises a base, a support and a side plate, the side plate and the support are fixedly connected to the upper side face and the lower side face of the base respectively, a bonding mechanism is arranged on the front face of the side plate, and a clamping mechanism and a dust cleaning mechanism are arranged on the front side and the rear side of the bonding mechanism respectively. And mounting plates are fixedly connected to the lower surfaces of the clamping mechanism and the dust cleaning mechanism. According to the invention, the clamping mechanism is arranged, a silicon wafer and a glass sheet can be placed in a through hole, and an electromagnet plate can generate a repulsion effect on magnetic supporting plates when being electrified, so that the two supporting plates are far away from each other and are matched with the inner wall of a first fixing block to effectively position the silicon wafer and the glass sheet; and meanwhile, the first connecting plate is driven to move through the connecting rod, the arc-shaped plate generates an extrusion effect on the silicon wafer or the glass sheet, the silicon wafer and the glass sheet are extruded out, the silicon wafer and the glass sheet are attached together, and the rapid assembly effect is achieved.

Description

technical field [0001] The invention belongs to the technical field of anodic bonding, and in particular relates to anodic bonding equipment. Background technique [0002] Anodic bonding is a method of wafer bonding widely used in the microelectronics industry that uses a combination of heat and an electrostatic field to seal two surfaces together. This bonding technique is most commonly used to seal glass layers onto silicon wafers. [0003] When the bonding equipment bonds the silicon wafer to the glass wafer, there may still be some fine particle impurities such as dust on the surface of the silicon wafer and the glass wafer. These impurities will affect the bonding effect of the silicon wafer and the glass wafer, resulting in poor bonding of the sealing surface. Compactness affects the normal use of silicon wafers and glass sheets. At the same time, a heating mechanism is generally used during bonding, but the heating mechanism is in a high temperature state when used f...

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Problems solved by technology

[0004] The purpose of the present invention is: in order to solve the problem that there may still be some fine particle impurities such as dust on the surface of the silicon wafer and the glass wafer. In the normal use of sheets and glass sheets, a heating mechanism is generally required during bonding, but the heating mechanism is in a high temp

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