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Semiconductor device

A semiconductor and equipment technology, applied in the field of semiconductor equipment, can solve the problem that the temperature measuring device cannot accurately monitor the temperature of semiconductor equipment for a long time, and achieve the effect of accurate temperature monitoring

Active Publication Date: 2021-07-13
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of this, the present application provides a semiconductor device to solve the problem that the existing temperature measuring device cannot accurately monitor the temperature in the cavity of the semiconductor device for a long time

Method used

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Embodiment Construction

[0024] As mentioned in the background technology, in the prior art, due to the gas phase components in the growth process of physical vapor transport (PVT) will be deposited on the temperature measurement window, forming a relatively dense yellow-brown volatile deposition layer, which is almost impermeable. Light. At this time, for infrared thermometers that rely on light intensity to calculate the measured temperature, it is no longer possible to detect the accurate temperature of the upper part of the raw material processing device, such as the crucible, through the temperature measurement window. For process monitoring, since then, the temperature of the crucible has lost the ability to monitor in real time. Only electrical parameters, such as voltage, current or power, and the temperature of cooling water can be used as a reference to judge whether the internal temperature of the crucible has a large temperature difference. Fluctuation, because the specific heat capacity o...

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Abstract

The application discloses a semiconductor device, comprising: a cavity, an infrared temperature measurement sensor, a temperature measuring turntable and a transmission device; the top of which is provided with a first temperature measurement window; the infrared temperature measurement sensor is located outside the cavity, and the temperature measurement end of the infrared temperature measurement sensor faces the first temperature measurement window; the temperature measuring turntable is positioned in the cavity and is fixedly arranged with the top of the cavity, and the temperature measuring turntable is provided with at least two second temperature measuring windows; the transmission device is connected with the temperature measuring rotary table and used for driving the temperature measuring rotary table to rotate, rotating one of the at least two second temperature measuring windows to the position below the first temperature measuring window and enabling the second temperature measuring window to be located on an infrared light receiving path of the infrared temperature measuring sensor; and infrared light radiated in the cavity penetrates through the second temperature measurement window and the first temperature measurement window and is received by the temperature measurement end of the infrared temperature measurement sensor. According to the semiconductor device, long-time temperature monitoring of the interior of the cavity can be realized.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and in particular to a semiconductor device. Background technique [0002] In recent years, with the rapid development of high technologies such as new energy vehicles and 5G technology, the demand for circuit integration density, heat dissipation performance, device breakdown resistance, and fast response of switches has become more and more intense. The performance of silicon (Si), the next generation semiconductor, has gradually failed to meet the requirements of high performance. The third-generation semiconductors, such as gallium nitride (GaN), silicon carbide (SiC), etc., have a large band gap, high electron migration saturation rate, and excellent heat dissipation performance, breaking through the limitations of traditional silicon-based devices, making the first The third-generation semiconductors are widely used, so the third-generation semiconductor single crystal gro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C23C14/52G01J5/02G01J5/20H01L21/67
CPCC30B23/002C23C14/52H01L21/67248G01J5/20G01J5/02
Inventor 乔建东
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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