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High energy efficiency tcam based on fefet structure and its operation method

An operation method and energy-efficient technology, applied in the storage field, can solve problems such as insufficient performance and high energy consumption of TCAM, and achieve the effects of small search delay, reduced energy consumption, and reduced search delay

Active Publication Date: 2022-06-24
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide two TCAM designs based on 2FeFET structure to achieve lower energy consumption and delay in view of the problems of high energy consumption and insufficient performance of existing TCAMs

Method used

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  • High energy efficiency tcam based on fefet structure and its operation method
  • High energy efficiency tcam based on fefet structure and its operation method
  • High energy efficiency tcam based on fefet structure and its operation method

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Embodiment Construction

[0034] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0035] 1. The overall structure and operation process of the TCAM unit of 2FeFET-1T and its constituent arrays;

[0036] like figure 1 As shown, each TCAM cell includes a 2FeFET structure and an NMOS, where the FeFET device M in the 2FeFET structure 1 and FeFET devices M 2 The sources of , respectively, are connected to the search line SL 1 and SL 2 , the gate is connected to the word line WL respectively 1 and WL 2 , the drain is connected to the gate D of the NMOS, the drain of the NMOS is connected to the matching line ML, and the source is grounded. In an array, multiple cells are connected in parallel to ML to form a row, and each column shares the same vertical SL 1 and SL 2 , each ML is connected to VDD through a PMOS, and is connected to an inverting amplifier as an output at the same time.

[0037] The operation proces...

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Abstract

The invention discloses a high-energy-efficiency TCAM based on a FeFET structure and an operation method thereof, and relates to the design of an FeFET-based memory suitable for low power consumption and high performance; fully utilizing the storage characteristics of the FeFET to realize a new TCAM unit based on a 2FeFET structure The design saves the number of transistors, reduces the power consumption of searching, and obtains the non-volatility of data storage. The present invention respectively adopts 2FeFET-1T and 2FeFET-2T structures, combines the advantages of FeFET and CMOS, and utilizes the unique structure of FeFET to achieve less area overhead and higher Low power consumption, and achieve non-volatility.

Description

technical field [0001] The invention relates to the field of storage, in particular to a high-energy-efficiency TCAM based on a FeFET structure and an operation method thereof. Considering the use of the 2FeFET structure, it is used for the design of a non-volatile, low-power, high-performance TCAM. Background technique [0002] In the era of big data, various data-intensive applications require efficient, parallel data analysis operations to replace sequential, time, and energy-consuming operations in traditional digital machines, and this need is particularly acute in search capabilities. Ternary content addressable memory (TCAM) supports parallel searches on storage memory arrays for a given input vector, and is a potential solution to the challenge of processor memory bottlenecks. Due to its content-addressable and fully parallel properties, TCAM has found applications in many fields such as neuromorphic computing, IP routers, and in-memory data processing. [0003] Alt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/22
CPCG11C11/225G11C11/223
Inventor 尹勋钊范圳浩钱煜望浩然李超卓成
Owner ZHEJIANG UNIV
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