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Multi-layer stack type EEBG structure and design method thereof

A structure design and stacking technology, applied in the multi-layer stacked EEBG structure and its design field, can solve the problems of poor high frequency suppression effect, high cost, and only partial bandwidth range applications, and achieve noise reduction and low production cost. , the effect of increased bandwidth

Inactive Publication Date: 2021-06-01
SUZHOU LANGCHAO INTELLIGENT TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention mainly solves the problem that the high-frequency suppression effect of the current noise suppression method is not good, the cost is too high, and the bandwidth range is only partially applied.

Method used

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  • Multi-layer stack type EEBG structure and design method thereof
  • Multi-layer stack type EEBG structure and design method thereof
  • Multi-layer stack type EEBG structure and design method thereof

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Embodiment 1

[0054] The embodiment of the present invention also provides a multi-layer stacked EEBG structure, several EEBG structures using two different sizes are arranged and installed in opposite directions, please refer to Figure 6 and Figure 7 , including: twenty unit cells, twenty unit cells are arranged in a matrix, and the unit cells include: the PWR layer of the parallel metal plate, several stacked EEBGs, and the GND layer of the parallel metal plate; the stacked EEBG includes the first EEBG, four a second EEBG; four second EEBGs are also arranged in a matrix;

[0055] The stacked EEBG is installed between the PWR layer and the GND layer of the parallel metal plate;

[0056] The first EEBG is composed of a first square metal sheet and a first connecting column; a number of communication holes are opened on the square sheet; one end of the first connecting column is connected to the square sheet, and the other end is connected to the power layer;

[0057] The first EEBG and ...

Embodiment 2

[0066] The embodiment of the present invention provides a multi-layer stacked EEBG structure design method, please refer to Figure 9 , including the following steps:

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Abstract

The invention discloses a multi-layer stack type EEBG structure which comprises at least one unit element. Each unit element comprises a flat metal plate and at least one stack type EEBG; the stack type EEBG is arranged between a power supply layer and a grounding layer of the flat metal plate; the stack type EEBG comprises a first EEBG and a second EEBG; the first EEBG is connected with the power supply layer; and the second EEBG is arranged between the first EEBG and the power supply layer, and penetrates through the first EEBG to be connected with the grounding layer. Through the mode, a capacitance can be increased by utilizing EBG configuration of different sizes and a multi-layer stack, a low-impedance surface can be formed, a noise source can be smoothly conducted to enter a GND grounding layer, a noise generated by the power supply can be obviously reduced, a bandwidth can be increased, and a cut-off depth and a center frequency can also move to high frequencies.

Description

technical field [0001] The invention relates to the technical field of digital circuits, in particular to a multilayer stacked EEBG structure and a design method thereof. Background technique [0002] Due to the rapid development of science and technology, the progress of computers is also advancing rapidly. Nowadays, digital circuit design has developed towards high speed, high bandwidth, small size, and low operating voltage. However, it also means that circuit components are more and more susceptible to noise. , thereby affecting the normal operation of the entire system. [0003] For the noise problem generated by digital circuits, the most widely used method among the current methods is to use decoupling capacitors (Decoupling Capacitor), but the effect of suppressing noise at high frequencies is relatively poor, and there is also the use of embedded capacitors (Embedded Capacitor), although the suppression effect in the high-frequency part is better than that of the d...

Claims

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Application Information

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IPC IPC(8): H05K1/02H05K3/00H03H7/01G06F30/33
CPCG06F30/33G06F2115/10H03H7/01H05K1/0236H05K3/0005
Inventor 王敬文
Owner SUZHOU LANGCHAO INTELLIGENT TECH CO LTD
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