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A device and method for removing s impurities in yellow phosphorus by directional solidification through full melting

A technology of directional solidification and yellow phosphorus, which is applied in post-processing equipment, chemical instruments and methods, phosphorus compounds, etc., can solve the problem of poor sulfur removal effect of low-sulfur phosphorus, and achieve smooth solid-liquid separation surface and uniform thermal field , cost-saving effect

Active Publication Date: 2021-11-23
贵州威顿晶磷电子材料股份有限公司
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AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a device and method for removing S impurities in yellow phosphorus by full melting directional solidification in order to improve the deficiencies of the prior art; to solve the problem of poor sulfur removal effect in the preparation of low-sulfur yellow phosphorus in the prior art

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  • A device and method for removing s impurities in yellow phosphorus by directional solidification through full melting
  • A device and method for removing s impurities in yellow phosphorus by directional solidification through full melting
  • A device and method for removing s impurities in yellow phosphorus by directional solidification through full melting

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Embodiment 1

[0027] A device for removing impurities from yellow phosphorus by full melting directional solidification method, as attached Figure 1-3 As shown, it includes a vertical heating device 1 and a yellow phosphorus carrier 3, and it also includes an annular cooler 2, which is located above the vertical heating device 1 and is closely attached to the top of the vertical heating device 1, The yellow phosphorus carrier 3 passes through the annular cooler 2 from top to bottom and is inserted into the vertical heating device 1. The top of the yellow phosphorus carrier 3 is hung on the motor 5 shaft, and the motor 5 is connected to the vertical slide rail 4. The upper part of the device is provided with a liquid level maintaining device 17 which is connected to the vertical heating device 1 through a hose 15 . The slide rail 4 is one of the key devices to ensure the displacement accuracy. The motor 5 is located on the wire table slide rail 4 and is the power source for the yellow phosp...

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Abstract

The invention relates to a device and method for removing S impurities in yellow phosphorus through directional solidification through full melting, which includes a vertical heating device and a yellow phosphorus carrier, and also includes an annular cooler, and the annular cooler is located above the vertical heating device And it fits closely with the top of the vertical heating device. The yellow phosphorus carrier passes through the annular cooler from top to bottom and is inserted into the vertical heating device. The top of the yellow phosphorus carrier is hung on the motor shaft, and the motor is connected to the vertical slide. On the rail, a liquid level maintaining device is arranged on the upper part of the device, and the liquid level maintaining device is connected to the vertical heating device through a hose. The method and device melt all the materials to be removed, then let the materials solidify gradually from one end, use the difference in the segregation coefficient of impurities to enrich the impurities at both ends of the material, and finally remove the two ends of the material. The sulfur impurity removal rate in phosphorus is over 95%. The method and device have good sulfur removal effect, simple device, easy production, high safety, and no harmful substance discharge.

Description

technical field [0001] The invention relates to a device and method for removing S impurities in yellow phosphorus through directional solidification through full melting, and belongs to the technical field of semiconductor materials. Background technique [0002] Due to the development of the semiconductor industry in recent years, the demand for high-purity yellow phosphorus has increased. High-purity yellow phosphorus is mainly used for the polycrystalline and single crystal growth of indium phosphide (InP) and gallium phosphide (GaP), that is, the synthesis of indium phosphide and gallium phosphide. Indium phosphide and gallium phosphide compound semiconductors require a phosphorus source with a purity of more than 6N, especially for sulfur content control. Therefore, in order to solve the limitation brought by the high sulfur content to the application of high-purity yellow phosphorus, it is imminent to develop low-sulfur yellow phosphorus production technology. Cont...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B35/00C30B29/40C30B29/44C01B25/047
CPCC01B25/047C30B29/40C30B29/44C30B35/007
Inventor 蒋飚郭之军王雲赵和英欧才彰刘祥程永福祝飘
Owner 贵州威顿晶磷电子材料股份有限公司
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