Electrochromic glass
An electronically controlled discoloration and glass technology, which is applied in nonlinear optics, instruments, optics, etc., can solve the problems of affecting applications, short cycle life, and non-discoloration, and achieve the effect of improving the uniformity of discoloration
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[0030] In addition, an embodiment of the present invention also provides a method for preparing an electrically controlled color-changing glass, for example, for preparing the aforementioned electrically controlled color-changing glass 900 . The method for preparing electrically controlled color-changing glass, for example, includes the steps of:
[0031] S11: A glass substrate is provided. Clean and dry the glass substrate.
[0032] S12: Plating a first conductive layer on the glass substrate. Specifically, the glass substrate is heated to a preset temperature, the range of the preset temperature is, for example, 280-300°C, and one or a combination of at least two of FTO, ITO, IGZO, AZO, GZO, and Ag is used as the target The material is deposited under a first preset vacuum sputtering pressure to obtain a first conductive layer. The first preset vacuum sputtering pressure, such as 1.0E -3 ~9.0E -3 mbar. Preferably, the first conductive layer may also be a pre-prepared c...
specific Embodiment
[0043] An electronically controlled color-changing glass, the film layer structure from the glass substrate to the outside is: glass substrate / ITO(150nm) / WNbOx+NiVOx(200nm) / Li(40nm) / WMoOx+NiCoOx(80nm) / ITO(120nm) / Si 3 N 4 (20nm).
[0044] The process of preparing this electronically controlled color-changing glass is as follows:
[0045] (1) The glass substrate is cleaned and dried, laser scribed, then cleaned and dried, and placed in a vacuum sputtering area;
[0046] (2) Deposit the ITO layer on the glass substrate by means of magnetron sputtering, the target used is an ITO rotating target, the power supply is DC or an intermediate frequency power supply with a frequency of 2000-40000Hz, the power is 1-30KW, and the process gas is argon , deposited at a temperature of 290°C;
[0047] (3) The WNbOx+NiVOx layer is deposited on the ITO layer by magnetron sputtering, the first target used is a metal WMo planar target, the second target is a metal NiV planar target, the power...
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