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Ion trapping device and ion trapping method

An ion and ion chip technology, applied in the field of quantum computing, can solve problems such as ion loss and interruption of quantum computing process.

Pending Publication Date: 2021-04-30
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, when ions are trapped, the atomic source needs to be heated first to provide a large amount of atomic beams, and then the atomic beams are directly sprayed to the ion trapping area near the ion chip, such as figure 1 As shown, since the ion chip is exposed to the atomic beam, a large number of atomic beams will also collide with the trapped ions, causing the ions to be lost from the potential well, resulting in the interruption of the quantum computing process

Method used

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  • Ion trapping device and ion trapping method

Examples

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example 1

[0111] Example 1, the first vacuum cavity is combined with the second vacuum, and the first optical trap laser is combined with the second optical trap laser.

[0112] Such as Figure 6 Shown is a schematic structural diagram of another ion trapping device provided in this application. In the ion trapping device, the atom generation module and the atom trapping module (take 3D-MOT as an example) are set in the first vacuum chamber (also called atomic chamber), and the ion trapping module is set in the second vacuum chamber (also called It can be called an ion chamber), and the first vacuum chamber communicates with the second vacuum chamber through a differential tube (or a differential device). Since the atoms in the atom generation module need to be heated in the first vacuum chamber to generate a certain atomic beam current and the vacuum degree is not high, the vacuum degree of the first vacuum chamber is relatively low, usually 10 -7 -10 -8 Pa or so. The second vacuum...

example 2

[0117] Example 2, the third vacuum cavity, the combination of the first optical trap laser and the second optical trap laser.

[0118] Such as Figure 8Shown is a schematic structural diagram of another ion trapping device provided in this application. In the ion trapping device, the atom generation module, the atom trapping module (taking 3D-MOT as an example) and the ion trapping module are all arranged in the third vacuum chamber. In a possible implementation manner, the distance between the first region in the atom trapping module and the ion chip in the ion trapping module satisfies within the second preset range S. The second preset range needs to satisfy that atoms are not easily deposited on the ion chip. Through the second example, being arranged in the same vacuum chamber helps to reduce the complexity of the vacuum system and the complexity of transferring atomic groups.

[0119] combined with the above Figure 8 The ion trapping device shown, as Figure 9a to ...

example 3

[0124] Example three, the combination of the first vacuum cavity and the second vacuum, the first optical trap laser.

[0125] The structure of the ion trapping device in this example can be compared with the above Figure 6 The structure of the ion trapping device shown is the same, see above Figure 6 description of.

[0126] combined with the above Figure 6 The ion trapping device shown, as Figure 10a to Figure 10c , exemplarily shows the process of transferring atomic groups from the atomic cooling trapping module to the ion trapping region in the ion trapping module by another optical trapping laser device. Specifically: the optical trap laser module is used to align the beam waist of the first optical trap laser with the first region (i.e., the center of the 3D-MOT) in the atom trapping module, and load the atomic groups in the first optical trap laser (such as Figure 10a ). The optical trap laser module transfers the beam waist of the first optical trap laser fr...

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Abstract

The invention provides an ion trapping device and an ion trapping method. The ion trapping device comprises an atom generation module, an atom trapping module, an optical trap laser module and an ion trapping module. The atom generation module is used for generating an atom beam and spraying the atom beam to the atom trapping module. The atom trapping module is used for trapping the received atom beam to obtain an atom group. The light trap laser module is used for transmitting first light trap laser to the atom trapping module, loading an atomic group in the first light trap laser, and transferring the atomic group to the ion trapping module through the first light trap laser. The ion trapping module is used for trapping ions, and the ions are obtained by ionizing atomic groups from the light trap laser module. Atom groups are transferred from the atom trapping module to the ion trapping module through the first light trap laser, so that collision of trapped ions in the ion trapping module due to the fact that atomic beams are directly sprayed to the ion trapping module is avoided.

Description

technical field [0001] The present application relates to the technical field of quantum computing, in particular to an ion trapping device and an ion trapping method. Background technique [0002] With the development of information technology, quantum computing has attracted more and more attention. The special feature of quantum computing is that the superposition of quantum states makes large-scale "parallel" computing possible. This is because the basic principle of quantum computing is to use qubits (ie ions) to encode information, in which the state of a single qubit not only has two classical states of 0 and 1, but also a superposition state of 0 and 1, n Qubits can be in 2 at the same time n A superposition of quantum states. Each quantum algorithm performs different quantum operations on different numbers of qubits. The larger the number of qubits, the stronger its parallel acceleration capability, and the faster it can solve the same problem. [0003] At prese...

Claims

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Application Information

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IPC IPC(8): G21K1/00
CPCG21K1/003G21K1/006
Inventor 杨江陵吴裕平沈杨超
Owner HUAWEI TECH CO LTD
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