Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Digital Alloy, Digital Alloy Mid-Wave Infrared Detector

An infrared detector, digital technology, used in semiconductor devices, nanotechnology for materials and surface science, electrical components, etc., to solve problems such as reduced quantum efficiency

Active Publication Date: 2022-05-10
SUZHOU KUNYUAN OPTOELECTRONICS CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that there is a higher valence band order in the absorbing layer and the barrier layer in the existing barrier device, so that the holes are hindered by the valence barrier during the movement, and the quantum efficiency is reduced. Insufficient, provide a digital alloy AlAsSb material and a digital alloy mid-wave infrared detector

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Digital Alloy, Digital Alloy Mid-Wave Infrared Detector
  • Digital Alloy, Digital Alloy Mid-Wave Infrared Detector
  • Digital Alloy, Digital Alloy Mid-Wave Infrared Detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0100] The preparation method of the infrared device of the present invention: the steps include:

[0101] 1. Load the GaSb substrate into the growth chamber of the MBE system;

[0102] 2. When the vacuum of the growth chamber is better than 1E-6torr, heat the substrate to 500-700°C to remove the residual oxide layer on the substrate surface;

[0103] 3. Lower the deoxidation temperature by 10-200°C, and grow a GaSb buffer layer with a thickness of 100-1000nm;

[0104] 4. On the basis of the buffer layer, grow a layer of heavily doped blk-InAsSb layer with a thickness of 50-1000nm as the n-type electrode of the detector;

[0105] 5. Grow a layer of non-doped blk-InAsSb with a thickness of 500-10000nm as the absorbing layer of the detector;

[0106] 6. Grow a layer of AlSb material with a thickness of d1, and then grow a layer of AlAsxSb1-x material with a thickness of d2 to form a basic unit with a thickness of d1+d2 to obtain DA-AlAsySb1-y. The average As composition in th...

Embodiment 2

[0113] The preparation method of the infrared device of the present invention: the steps include:

[0114] 1. Load the GaSb substrate into the growth chamber of the MBE system;

[0115] 2. When the vacuum of the growth chamber is better than 1E-6torr, heat the substrate to 500-700°C to remove the residual oxide layer on the substrate surface;

[0116] 3. Lower the deoxidation temperature by 10-200°C, and grow a GaSb buffer layer with a thickness of 100-1000nm;

[0117] 4. On the basis of the buffer layer, grow a layer of heavily doped blk-InAsSb layer with a thickness of 50-1000nm as the n-type electrode of the detector;

[0118] 5. Grow a layer of p-type lightly doped blk-InAsSb with a thickness of 500-10000nm as the absorber layer of the detector, the dopant is Be, and the p-type concentration range: 1E+15-5E+16 / cm3;

[0119] 6. Grow a layer of AlSb material with a thickness of d1, and then grow a layer of AlAsxSb1-x material with a thickness of d2 to form a basic unit wit...

Embodiment 3

[0126] The preparation method of the infrared device of the present invention: the steps include:

[0127] 1. Load the GaSb substrate into the growth chamber of the MBE system;

[0128] 2. When the vacuum of the growth chamber is better than 1E-6torr, heat the substrate to 500-700°C to remove the residual oxide layer on the substrate surface;

[0129] 3. Lower the deoxidation temperature by 10-200°C, and grow a p-type heavily doped material with a thickness of 50-1000nm as a p-type electrode layer;

[0130] 4. Grow a layer of AlSb material with a thickness of d1, and then grow a layer of AlAsxSb1-x material with a thickness of d2 to form a basic unit with a thickness of d1+d2 to obtain AlAsySb1-y. The average As composition in this digital alloy is represented by y express. The relationship between the overall average As composition y in the digital alloy and the As composition x in one layer of the basic unit is expressed as follows,

[0131] The satisfaction of this for...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention aims at the disadvantage that existing barrier devices have a relatively high valence band step in the absorbing layer and the barrier layer, so that the holes are hindered by the valence barrier in the process of movement, and the quantum efficiency is reduced. A digital alloy AlAsSb material and a digital alloy mid-wave infrared detector, the digital alloy grows a layer of AlAsxSb1‑x material with a thickness of d2 on a layer of AlSb material with a thickness of d1 to form an AlAsySb1‑x material with a thickness of d1+d2 The y basic unit, d1+d2 as a cycle, repeats the growth of n cycles to form a digital alloy DA‑AlAsySb1‑y, where y is the overall average As composition in the digital alloy, and x is the As content in one layer of the basic unit Components, the use of digital alloys and digital alloy mid-wave infrared detectors provided by the present invention can make holes move more smoothly, can effectively improve the quantum efficiency of the detectors, and have no effect on the dark current of the device, making it easier to adapt to different the absorbing layer.

Description

technical field [0001] The invention relates to a digital alloy material and a mid-wave infrared detector with the digital alloy material. Background technique [0002] The mid-wave infrared detector with a detection wavelength of 3-5 microns is widely used in aerospace, satellite reconnaissance, precision guidance, night vision imaging and other fields. The current mainstream InSb and HgCdTe-based mid-wave infrared detectors have excellent performance, but they need to work in a low temperature environment of about 80K, so the requirements for the refrigerator are very high, which makes the overall size and weight of the detector large, power consumption and cost high. Reducing the size, weight, power consumption, cost, and improving reliability of detectors is an important development trend of detectors. The reduction of size, weight, power consumption, cost and improvement of reliability of detectors can greatly expand its The scope of application, for example, can be a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/0304H01L31/109B82Y30/00B82Y40/00
CPCH01L31/03529H01L31/03042H01L31/03046H01L31/109B82Y30/00B82Y40/00
Inventor 陈意桥张国祯陈超周浩
Owner SUZHOU KUNYUAN OPTOELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com