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Bismuth vanadate photoanode and its preparation method and application

A technology of bismuth vanadate and photoanode, which is applied in the fields of clean energy and photoelectrochemistry, can solve the problems of slow water oxidation reaction kinetics of photoanode, achieve fast water oxidation kinetics performance, improve separation efficiency and injection efficiency, and improve photoelectricity The effect of chemical activity

Active Publication Date: 2022-01-25
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the slow kinetics of the photoanode water oxidation reaction in the prior art, the object of the invention is to provide a bismuth vanadate photoanode and its preparation method and application. The bismuth vanadate photoanode provided by the invention has a higher The electron-hole separation efficiency and fast water oxidation kinetics enable it to achieve a higher photocurrent density at a lower bias voltage, showing a higher solar energy utilization rate, and solving the energy crisis and environmental pollution problems in the future great potential

Method used

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  • Bismuth vanadate photoanode and its preparation method and application
  • Bismuth vanadate photoanode and its preparation method and application
  • Bismuth vanadate photoanode and its preparation method and application

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Embodiment approach

[0049] The third embodiment of the present invention provides an application of the above-mentioned bismuth vanadate photoanode in photoelectrocatalytic decomposition of water to produce hydrogen and oxygen.

[0050] The fourth embodiment of the present invention provides a photoelectrochemical electrolysis cell, including a photoanode and a photocathode, and the photoanode is the above-mentioned bismuth vanadate photoanode.

[0051] In order to enable those skilled in the art to understand the technical solution of the present invention more clearly, the technical solution of the present invention will be described in detail below in conjunction with specific examples and comparative examples.

[0052] The test materials used in the following examples are all conventional test materials in the art, and can be purchased through commercial channels.

Embodiment 1

[0054] A BVO photoanode with a fast water oxidation rate and a preparation method thereof, comprising the steps of:

[0055] (1) Ultrasonic cleaning of FTO conductive glass:

[0056] First cut with a glass cutter to obtain FTO conductive glass with a size of 3cm×4cm, then ultrasonically clean with acetone, ethanol and isopropanol for 30 minutes, and finally store in isopropanol solvent.

[0057] (2) Synthesis of carbon spheres by hydrothermal method:

[0058] Dissolve 4 g of glucose in 50 mL of deionized water and stir for 15 min to obtain a clear solution. Then the solution was transferred to a reaction kettle with a 100 ml polytetrafluoroethylene liner, and subjected to hydrothermal reaction at 180° C. for 3.5 hours to obtain a brown solution. Then the brown solution was centrifuged three times with pure water and ethanol at 12000rpm / 3 minutes to obtain carbon spheres with a relatively uniform size, which were dispersed in the ethanol solution for later use.

[0059] (3) ...

Embodiment 2

[0068] This example prepares composite BVO photoanodes with different contents of carbon spheres, the preparation method is the same as in Example 1, the difference is that the concentrations of the carbon spheres used in the spin coating in step (5) are respectively: 0.25C, 0.5C, 1C, 2C, The prepared photoanodes are marked as 0.25C-BVO, 0.5C-BVO, C-BVO, 2C-BVO, respectively.

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Abstract

The invention discloses a bismuth vanadate photoanode and its preparation method and application. The preparation method is as follows: sequentially preparing a bismuth vanadate layer and a carbon sphere layer on the surface of a transparent conductive substrate, and then repeatedly preparing a bismuth vanadate layer and a carbon sphere layer , so that an active layer is formed on the surface of the transparent conductive substrate, the active layer is formed by interlacing n-layer bismuth vanadate layers and n-1 layers of carbon sphere layers, the outermost layers on both sides of the active layer are bismuth vanadate layers, n is a natural number greater than 1; the bismuth vanadate precursor solution is spin-coated into a bismuth vanadate precursor film, then dried and calcined to form a bismuth vanadate layer; the bismuth vanadate precursor solution contains vanadium salt and bismuth salt; The carbon sphere dispersion liquid is spin-coated to form a carbon sphere film, and then dried to form a carbon sphere film. The bismuth vanadate photoanode provided by the present invention has higher electron-hole separation efficiency and fast water oxidation kinetics, so that it can achieve higher photocurrent density at lower bias voltage, showing higher Solar utilization.

Description

technical field [0001] The invention belongs to the technical field of clean energy and photoelectrochemistry, and relates to a bismuth vanadate photoanode, a preparation method and application thereof. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] At present, the energy crisis and environmental pollution are becoming more and more serious, and global natural disasters are also highlighted. Therefore, the search for renewable and clean energy has attracted the attention of all mankind. As an inexhaustible new energy source, solar energy has been widely favored by researchers in recent years in its development and utilization. Photoelectrochemical technology is an effect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B11/031C25B11/091C25B11/053C25B1/04C25B1/55B82Y30/00B82Y40/00
CPCC25B1/04B82Y30/00B82Y40/00Y02P20/133Y02E60/36
Inventor 张晓阳王敏瑞王泽岩黄柏标程合锋郑昭科王朋刘媛媛张倩倩
Owner SHANDONG UNIV
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