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A method for preparing layered bismuth oxide selenium semiconductor thin film by reverse air flow method

A technology of semiconductor and bismuth oxide, which is applied in the field of preparation of layered bismuth oxide selenium semiconductor film by reverse air flow method, can solve the problems of uneven nucleation probability of thin layers, reduce the probability of uneven nucleation, broad application prospects, large area effect

Active Publication Date: 2021-04-13
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to propose a method for preparing a layered bismuth oxide selenide semiconductor film by a reverse air flow method, which is used to overcome the need for low-pressure environmental conditions in the prior art and to prepare Bi 2 o 2 Defects such as uneven nucleation probability of Se thin layer

Method used

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  • A method for preparing layered bismuth oxide selenium semiconductor thin film by reverse air flow method
  • A method for preparing layered bismuth oxide selenium semiconductor thin film by reverse air flow method
  • A method for preparing layered bismuth oxide selenium semiconductor thin film by reverse air flow method

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Embodiment 1

[0046] Such as figure 1 As shown, open the first valve 1, the second valve 2, close the third valve 3, and the fourth valve 4. At this time, the air flow flows from the substrate to the growth raw material, which is a reverse air flow; close the first valve 1, the second valve 2, Open the third valve 3 and the fourth valve 4, and at this time, the airflow flows from the growth raw material to the substrate, which is a positive airflow.

[0047] This embodiment provides a method for preparing a layered bismuth oxide selenide semiconductor thin film by a reverse air flow method, which includes the following steps:

[0048] Weigh Bi 2 o 2 1g of Se powder raw material is placed in the center of the quartz tube furnace. Take the mica substrate and place it at the hearth mouth of the quartz tube furnace (i.e. Bi 2 o 2 6 cm downstream of the Se powder feedstock). Pass the carrier gas argon, the airflow is 200 cubic centimeters per minute, and the airflow direction is reverse ai...

Embodiment 2

[0056] This embodiment provides a method for preparing a layered bismuth oxide selenide semiconductor thin film by a reverse air flow method, which includes the following steps:

[0057] Weigh Bi 2 o 2 1g of Se powder raw material is placed in the center of the quartz tube furnace. Take the mica substrate and place it at the hearth mouth of the quartz tube furnace (i.e. Bi 2 o 2 18 cm downstream of the Se powder raw material). Pass the carrier gas argon, the airflow is 100 cubic centimeters per minute, and the airflow direction is reverse airflow at this time, and the tube furnace is heated at the same time, from room temperature to 700 ° C, and kept at 700 ° C for 30 minutes, After the heat preservation is over, adjust the airflow to a positive airflow and deposit for 12 minutes. After the deposition, the temperature is naturally cooled to room temperature to obtain a layered Bi 2 o 2 Se film.

[0058] The pressure of the whole preparation process is normal pressure. ...

Embodiment 3

[0061] This embodiment provides a method for preparing a layered bismuth oxide selenide semiconductor thin film by a reverse air flow method, which includes the following steps:

[0062] Weigh Bi 2 o 2 2g of Se powder raw material is placed in the center of the quartz tube furnace. Take the mica substrate and place it at the hearth mouth of the quartz tube furnace (i.e. Bi 2 o 2 12 cm downstream of the Se powder raw material). Pass the carrier gas argon, the airflow is 175 cubic centimeters per minute, and the airflow direction is reverse airflow at this time, and the tube furnace is heated at the same time, from room temperature to 720 ° C, and kept at 720 ° C for 20 minutes, After the heat preservation is over, adjust the airflow to a positive airflow and deposit for 6 minutes. After the deposition, the temperature is naturally cooled to room temperature to obtain a layered Bi 2 o 2 Se film.

[0063] The pressure of the whole preparation process is normal pressure.

...

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Abstract

The invention proposes a method for preparing a layered bismuth-oxyselenide semiconductor film by a reverse airflow method, which belongs to the technical field of semiconductor materials and includes the following steps: using bismuth-oxyselenide solid powder as a growth raw material, placing the growth raw material in a tubular One end of the furnace, the substrate is placed at the other end of the tube furnace; the reverse air flow is introduced into the tube furnace and the tube furnace is heated, and after reaching the deposition temperature, the temperature is kept at the deposition temperature; After the completion, the tube furnace is turned into a positive airflow to deposit and grow the growth raw material on the substrate. After the deposition is completed, a layered bismuth oxide selenide semiconductor thin film is obtained. The invention provides a controllable preparation of large-area Bi by using forward and reverse airflow 2 o 2 Se two-dimensional semiconductor method, the method is simple and easy to operate, low cost, large film area and high quality obtained, and has broad application prospects in the field of two-dimensional semiconductors.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for preparing a layered bismuth-oxygen-selenium semiconductor thin film by a reverse air flow method. Background technique [0002] Ultra-thin and high-mobility layered semiconductors are the foundation of modern electronics. However, traditional semiconductors have more and more disadvantages due to size reduction. It is imminent to develop and synthesize new semiconductors. Two-dimensional semiconductors have attracted extensive attention of researchers due to their unique layered structure and excellent optoelectronic properties. Bismuth Selenium Oxide (Bi 2 o 2 Se) is a classic thermoelectric material, which is a tetragonal crystal system (a=b=3.88 angstroms, c=12.16 angstroms, Z=2), and the layered structure is composed of (Bi 2 o 2 ) n and Se n Alternate connection composition. [0003] In recent years, C. DRASAR et al. have synthesized singl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C24/08C30B29/46C30B23/02
CPCC30B23/005C30B23/02C30B29/46
Inventor 杨夕朱梦剑朱志宏
Owner NAT UNIV OF DEFENSE TECH
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