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Method for preparing layered bismuth-oxygen-selenium semiconductor film by reverse airflow method

A semiconductor, bismuth oxide technology, applied in chemical instruments and methods, crystal growth, from condensed steam, etc., can solve the problems of uneven nucleation probability of thin layers, and achieve the reduction of uneven nucleation probability, large area and high quality high effect

Active Publication Date: 2021-02-12
NAT UNIV OF DEFENSE TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to propose a method for preparing a layered bismuth oxide selenide semiconductor film by a reverse air flow method, which is used to overcome the need for low-pressure environmental conditions in the prior art and to prepare Bi 2 o 2 Defects such as uneven nucleation probability of Se thin layer

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  • Method for preparing layered bismuth-oxygen-selenium semiconductor film by reverse airflow method
  • Method for preparing layered bismuth-oxygen-selenium semiconductor film by reverse airflow method
  • Method for preparing layered bismuth-oxygen-selenium semiconductor film by reverse airflow method

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Embodiment 1

[0046] Such as figure 1 As shown, open the first valve 1, the second valve 2, close the third valve 3, and the fourth valve 4. At this time, the air flow flows from the substrate to the growth raw material, which is a reverse air flow; close the first valve 1, the second valve 2, Open the third valve 3 and the fourth valve 4, and at this time, the airflow flows from the growth raw material to the substrate, which is a positive airflow.

[0047] This embodiment provides a method for preparing a layered bismuth oxide selenide semiconductor thin film by a reverse air flow method, which includes the following steps:

[0048] Weigh Bi 2 o 2 1g of Se powder raw material is placed in the center of the quartz tube furnace. Take the mica substrate and place it at the hearth mouth of the quartz tube furnace (i.e. Bi 2 o 2 6 cm downstream of the Se powder feedstock). Pass the carrier gas argon, the airflow is 200 cubic centimeters per minute, and the airflow direction is reverse ai...

Embodiment 2

[0056] This embodiment provides a method for preparing a layered bismuth oxide selenide semiconductor thin film by a reverse air flow method, which includes the following steps:

[0057] Weigh Bi 2 o 2 1g of Se powder raw material is placed in the center of the quartz tube furnace. Take the mica substrate and place it at the hearth mouth of the quartz tube furnace (i.e. Bi 2 o 2 18 cm downstream of the Se powder raw material). Pass the carrier gas argon, the airflow is 100 cubic centimeters per minute, and the airflow direction is reverse airflow at this time, and the tube furnace is heated at the same time, from room temperature to 700 ° C, and kept at 700 ° C for 30 minutes, After the heat preservation is over, adjust the airflow to a positive airflow and deposit for 12 minutes. After the deposition, the temperature is naturally cooled to room temperature to obtain a layered Bi 2 o 2 Se film.

[0058] The pressure of the whole preparation process is normal pressure. ...

Embodiment 3

[0061] This embodiment provides a method for preparing a layered bismuth oxide selenide semiconductor thin film by a reverse air flow method, which includes the following steps:

[0062] Weigh Bi 2 o 2 2g of Se powder raw material is placed in the center of the quartz tube furnace. Take the mica substrate and place it at the hearth mouth of the quartz tube furnace (i.e. Bi 2 o 2 12 cm downstream of the Se powder raw material). Pass the carrier gas argon, the airflow is 175 cubic centimeters per minute, and the airflow direction is reverse airflow at this time, and the tube furnace is heated at the same time, from room temperature to 720 ° C, and kept at 720 ° C for 20 minutes, After the heat preservation is over, adjust the airflow to a positive airflow and deposit for 6 minutes. After the deposition, the temperature is naturally cooled to room temperature to obtain a layered Bi 2 o 2 Se film.

[0063] The pressure of the whole preparation process is normal pressure.

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Abstract

The invention provides a method for preparing a layered bismuth-oxygen-selenium semiconductor film by a reverse airflow method, which belongs to the technical field of semiconductor materials and comprises the following steps of: taking bismuth-oxygen-selenium solid powder as a growth raw material, placing the growth raw material at one end in a tubular furnace, and placing a substrate at the other end in the tubular furnace; introducing reverse airflow into a tubular furnace, heating the tubular furnace, and keeping the temperature at a deposition temperature after the deposition temperatureis reached; after heat preservation is finished, introducing forward airflow into the tubular furnace to enable the growth raw material to be deposited and grow on the substrate; and after depositionis finished, obtaining the layered bismuth-oxygen-selenium semiconductor film. The invention provides the method for controllably preparing the large-area Bi2O2Se two-dimensional semiconductor by adopting forward and reverse airflow, the method is simple and easy to operate, the cost is low, the obtained film is large in area and high in quality, and the method has a wide application prospect in the field of two-dimensional semiconductors.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for preparing a layered bismuth-oxygen-selenium semiconductor thin film by a reverse air flow method. Background technique [0002] Ultra-thin and high-mobility layered semiconductors are the foundation of modern electronics. However, traditional semiconductors have more and more disadvantages due to size reduction. It is imminent to develop and synthesize new semiconductors. Two-dimensional semiconductors have attracted extensive attention of researchers due to their unique layered structure and excellent optoelectronic properties. Bismuth Selenium Oxide (Bi 2 o 2 Se) is a classic thermoelectric material, which is a tetragonal crystal system (a=b=3.88 angstroms, c=12.16 angstroms, Z=2), and the layered structure is composed of (Bi 2 o 2 ) n and Se n Alternate connection composition. [0003] In recent years, C. DRASAR et al. have synthesized singl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B23/02
CPCC30B23/005C30B23/02C30B29/46
Inventor 杨夕朱梦剑朱志宏
Owner NAT UNIV OF DEFENSE TECH
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