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Light emitting diode

A technology of light-emitting diodes and photoluminescence, which is applied in the direction of organic semiconductor devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of phosphorescent OLED device doping, environmental pollution, poor performance of electroluminescent devices, and low color purity, and achieve Improve the light output coupling problem, improve device performance, and achieve high color purity

Inactive Publication Date: 2021-02-02
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] After decades of development, the preparation process and device stability of OLED are relatively mature, and it has a very important application prospect in the field of display and lighting, but there are still problems to be solved: 1) The fluorescent OLED device with relatively mature technology is limited The efficiency limit of electroluminescence is 25%, and phosphorescent OLED devices need to be doped with heavy metal elements that pollute the environment; 2) In terms of display and lighting, red is an essential color as one of the three primary colors, but red OLED The device performance of light-emitting diodes still needs to be improved; 3) Since the spectrum excited by OLEDs is generally wide and the color purity is low, it still needs to be improved as a display
[0003] Perovskite quantum dots have simple preparation methods, low material prices, and high photoluminescence quantum yields. However, due to the coating of organic ligands, the performance of electroluminescent devices prepared as light-emitting layers is poor, which is different from that of mature OLEDs. There are many differences in technology

Method used

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Embodiment 1

[0030]This embodiment provides a light emitting diode, which includes a photoluminescence layer and an OLED layer.figure 1 Schematic diagram of the light-emitting diode structure of this embodiment, refer tofigure 1 The OLED layer includes a substrate, a transparent conductive electrode layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and a cathode layer; the OLED layer is based on the substrate, and the order from bottom to top is the transparent conductive electrode layer and the hole The transport layer, the organic light emitting layer, the electron transport layer and the cathode layer; the photoluminescent layer is located on the other side of the substrate of the OLED layer. After voltage is applied to the OLED part, the light emitted by the OLED part (organic light-emitting layer) is absorbed by the perovskite QDs light-emitting layer, and then the perovskite QDs emit light of another color.

[0031]Among them, the photoluminescent lay...

Embodiment 2

[0046]The structure of the light-emitting diode of Example 2 is the same as that of Example 1, but the organic light-emitting layer uses TADF green light material, and the photoluminescent layer still uses perovskite red light QDs material.

[0047]The obtained electroluminescence spectrum is as followsimage 3Shown. After replacing the blue OLED with a green OLED with a wavelength of 525nm, the spectrum detected by the spectrometer can obtain warm white light, which proves that OLED devices of different wavelengths and brightness are used to excite the perovskite QDs light-emitting layer. A white light device with adjustable color temperature is obtained.

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Abstract

The invention provides a light emitting diode. The light emitting diode comprises a photoluminescence layer and an OLED layer, wherein the OLED layer comprises a substrate, a transparent conductive electrode layer, a hole transport layer, an organic light emitting layer, an electron transport layer and a cathode layer; the OLED layer takes the substrate as a bottom, and the transparent conductiveelectrode layer, the hole transport layer, the organic light emitting layer, the electron transport layer and the cathode layer are arranged from bottom to top in sequence; and the photoluminescence layer is located on the other side of the substrate of the OLED layer. The light emitting diode is high in color purity and adjustable in spectrum; an insulation protection material is added into the photoluminescence layer on the other side, so the photoluminescence layer can be well protected, and problems in light output coupling can be solved; and a monochromatic device with high color purity or a white light device with adjustable color temperature can be obtained through adjustment.

Description

Technical field[0001]The invention relates to the technical field of optoelectronic materials and devices, in particular to a light-emitting diode.Background technique[0002]After decades of development, OLED has mature preparation technology and device stability. It has very important application prospects in the display and lighting fields, but there are still problems to be solved: 1) The more mature fluorescent OLED devices are limited by The efficiency limit of electroluminescence is 25%, and phosphorescent OLED devices need to be doped with heavy metal elements that pollute the environment; 2) In display and lighting, red is an indispensable color as one of the three primary colors, but red OLED The device performance of the light-emitting diode still needs to be improved; 3) Because the OLED excitation spectrum is generally broad and the color purity is low, it still needs to be improved when used as a display.[0003]Perovskite quantum dots have simple preparation methods, low ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/52H01L51/56
CPCH10K85/30H10K50/11H10K50/115H10K50/844H10K2102/00H10K71/00
Inventor 宋丹丹路遥徐征赵谡玲乔泊
Owner BEIJING JIAOTONG UNIV
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