Semiconductor laser and manufacturing method thereof

Abstract

The invention discloses a semiconductor laser and a manufacturing method thereof. The semiconductor laser integrates a first waveguide layer and a second waveguide layer of a passive area in a resonant cavity in a butt joint growth mode, and when current is injected into an active area to generate optical gain to achieve lasing for output, the current can pass through a double-layer waveguide of the passive area; when the light field is coupled to the lower waveguide to reach an output end face, the size of the light spot in the vertical direction is effectively increased, the near-field lightspot is expanded, and the far-field divergence angle is reduced, so that the light beam output quality is improved, the light beam adjustment is facilitated, the optical fiber coupling efficiency isimproved, and the packaging coupling cost is reduced. And meanwhile, when the light field is transmitted from the double-layer waveguide of the passive area to single-layer waveguide of the active area, the loss is increased compared with that of a single-layer waveguide, so that the loss of external feedback light is increased, and the anti-reflection capability of the laser is further improved.

Description

technical field [0001] The invention relates to the field of semiconductor light emitters, in particular to a semiconductor laser and a manufacturing method thereof. Background technique [0002] Semiconductor lasers have been widely used in optical fiber communication, pump source, material processing, optical sensing, laser radar and other fields due to their advantages of small size, light weight, high electro-optical conversion efficiency, stable performance, high reliability and long life. . However, since the active region of a semiconductor laser generally adopts a multi-quantum well structure, its thickness is in the range of 100-200nm, and its width is in the range of 2-5μm. The light spot, especially in the vertical direction, due to its thin thickness, the far-field divergence angle in the vertical direction is generally 40~60°, which is much larger than the divergence angle in the horizontal direction, which is not conducive to the adjustment of the beam, reduce...

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Problems solved by technology

However, since the active region of a semiconductor laser generally adopts a multi-quantum well structure, its thickness is in the range of 100-200nm, and its width is in the range of 2-5μm. The light spot, especially in the vertical direction, due to its thin thickness, the far-field divergence angle in the vertical direction is generally 40~60°, which is much larger than the divergence angle in the horizontal direction, which is not conducive to the adjustment of the beam, reduces the coupling efficiency of the fiber, and affects the semiconductor use of lasers

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