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Low-temperature substrate heating table for growing semiconductor film and manufacturing method thereof

A heating stage, low-temperature technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as the inability to achieve direct cooling of the substrate with a large source-substrate temperature difference, and the cracking and peeling of TFT circuit boards and films.

Pending Publication Date: 2021-01-29
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the substrate heating table (structure shown in the figure) of the close-distance sublimation furnace currently on the market cannot realize the large temperature difference between the source and the substrate and the direct cooling of the substrate, as well as the substrate heating during the film growth process The low temperature requirement (25-300°C) of the bottom will cause the TFT circuit board and film to crack or even fall off. The present invention can solve these problems

Method used

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  • Low-temperature substrate heating table for growing semiconductor film and manufacturing method thereof
  • Low-temperature substrate heating table for growing semiconductor film and manufacturing method thereof
  • Low-temperature substrate heating table for growing semiconductor film and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] 1. A low-temperature substrate heating platform for growing semiconductor thin films, the structure comprising a heating part, a water cooling part, a thermocouple and a mask plate. The heating part is located around the lower part of the heating table, with infrared lamps inserted, which can directly heat the substrate through the stainless steel at the bottom of the heating table; the water cooling part is located in the water cooling chamber inside the heating table, and there are three waterway baffles inside the chamber for Realize the "S" shape of the internal water flow, which can increase the speed of water flow, expand the water cooling area at the bottom of the heating table, and improve the heat dissipation efficiency of the substrate; the thermocouple is located in the middle of the heating table, and the bottom of the thermocouple is flush with the bottom of the heating table , which can realize accurate temperature measurement of the substrate; the mask pla...

Embodiment 2

[0076] The difference between this embodiment and Embodiment 1 is that: n baffles are provided in the internal waterway, and n is greater than or equal to 1. If the size of the heating table is relatively large, it is necessary to add baffles to increase the flow rate of water inside the heating table; if the size of the heating table is relatively small, a relatively large water flow rate can be achieved by setting fewer baffles.

[0077] 1. A low-temperature substrate heating platform for growing semiconductor thin films, the structure comprising a heating part, a water cooling part, a thermocouple and a mask plate. The heating part is located around the lower part of the heating table, with infrared lamps inserted, which can directly heat the substrate through the stainless steel at the bottom of the heating table; the water cooling part is located in the water cooling chamber inside the heating table, and there are three waterway baffles inside the chamber for Realize the ...

Embodiment 3

[0089] 1. A low-temperature substrate heating platform for growing semiconductor thin films, the structure comprising a heating part, a water cooling part, a thermocouple and a mask plate. The heating part is located around the lower part of the heating table, with infrared lamps inserted, which can directly heat the substrate through the stainless steel at the bottom of the heating table; the water cooling part is located in the water cooling chamber inside the heating table, and there are three waterway baffles inside the chamber for Realize the "S" shape of the internal water flow, which can increase the speed of water flow, expand the water cooling area at the bottom of the heating table, and improve the heat dissipation efficiency of the substrate; the thermocouple is located in the middle of the heating table, and the bottom of the thermocouple is flush with the bottom of the heating table , which can realize accurate temperature measurement of the substrate; the mask pla...

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Abstract

The invention discloses a low-temperature substrate heating table for growing a semiconductor film and a manufacturing method thereof. The substrate heating table structurally comprises a heating part, a water cooling part, a thermocouple and a mask plate. The heating part is positioned around the lower part of the heating table, and infrared lamp tubes can be inserted into the heating part to realize direct heating of the substrate; the water cooling part is located in an inner cavity of the heating table, three waterway baffles are arranged in the cavity and used for achieving S-shaped displacement of internal water flow, the speed of the water flow is increased, and the heat dissipation efficiency of the substrate is improved; the thermocouple is positioned in the middle of the heatingtable, and the bottom of the thermocouple is flush with the bottom of the heating table to realize accurate temperature measurement of the substrate; and the mask plate is located on the lower portionof the heating table, the mask plate and the heating table are two independent components, the mask plate can be bolted on the heating table through the threaded holes in the lower portion of the heating table and screws, and the back of the substrate is flush with the bottom of the heating table. According to the low-temperature type substrate heating table designed by the invention, the temperature of the substrate can be adjusted within the range of 25 DEG C to 300 DEG C.

Description

technical field [0001] The invention relates to a low-temperature substrate heating platform for growing semiconductor thin films and its manufacturing method. The substrate heating platform is especially used for the close-distance sublimation growth of cadmium zinc telluride semiconductor polycrystalline thin film materials. Background technique [0002] The short-distance sublimation method is one of the important methods for growing semiconductor thin films. We propose to grow CZT polycrystalline film directly on the TFT circuit substrate at low temperature to make a large-area direct X-ray flat panel detector. Since the substrate heating table (structure shown in the figure) of the close-distance sublimation furnace currently on the market cannot realize the large temperature difference between the source and the substrate and the direct cooling of the substrate, as well as the substrate heating during the film growth process The low temperature requirements of the bot...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67098H01L21/67115
Inventor 李易伟查钢强张文玉李阳曹昆
Owner NORTHWESTERN POLYTECHNICAL UNIV
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