Air layer coupling etalon
An etalon and air layer technology, applied in the field of filters, can solve the problems of large size, low yield, and high cost, and achieve the effect of simple assembly method, low sensitivity, and easy mass production
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Embodiment 1
[0028] Embodiment 1: The structure diagram of embodiment 1 of the present invention is shown in Figure 4 to 6, and Figure 4 is a single-cavity etalon 1, and Figure 5 is another single-cavity etalon 2, and two single-cavity etalons 1, 2 have The same or similar free spectral range, coating reflectance and transmission peak. Single-cavity etalons 1 and 2 belong to solid etalons, and the solid material can be one of silicon, optical glass or crystal, and the absorption of this material to a specific wavelength is very small; the two parallel polished surfaces of single-cavity etalons 1 and 2 Coated with a partially reflective film with the same reflectivity;
[0029] The effective light hole 21 of the single-cavity etalon 2 can be formed by various methods, including processes such as photolithographic mask or fixture shielding, coating, or photolithographic mask post-etching, to obtain a step layer 22 with a precise thickness. The thickness of the layer 22 is (2N+1) / 4 times of ...
Embodiment 2
[0031] Embodiment 2: The structural diagram of Embodiment 2 of the present invention is shown in Figures 7 and 8 .
[0032] Figure 7 shows single-cavity etalons 1, 2, and 3. The three single-cavity etalons 1, 2, and 3 have the same or similar free spectral range, coating reflectivity, and transmission peak. Single-cavity etalons 1, 2, and 3 belong to solid etalons, and the solid material can be one of silicon, optical glass, or crystal, and the absorption of this material for a specific wavelength is very small. The parallel polished surfaces are coated with a partially reflective coating with the same reflectivity.
[0033] The effective apertures 21 and 31 of the single-cavity etalon 2 and 3 can be formed by various methods, including processes such as photolithographic mask or fixture shielding and coating, or photolithographic mask post-etching, etc., to obtain mesa with precise thickness. Steps 22 and 32, the thickness of step layers 22 and 32 is (2N+1) / 4 times the centr...
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Abstract
Description
Claims
Application Information
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