Growth method of miniature light-emitting diode epitaxial wafer

Abstract

The invention provides a growth method of a miniature light-emitting diode epitaxial wafer. The growth method comprises the following steps: growing an epitaxial layer on a substrate; when an epitaxial layer is grown on the substrate, introducing blowing gas into a cavity cover of the reaction cavity to blow by-products generated in the reaction cavity to the tail gas end of the reaction cavity, so that the by-products are discharged out of the reaction cavity; wherein the usage amount of the purge gas is positively related to the usage amount of an MO source required by growth of each layer,the flow of reaction gas required by growth of each layer, the growth thickness of each layer and the doping concentration of each layer; wherein the usage amount of the purge gas is also related to the growth stage of each layer of the epitaxial layer, the growth stage of each layer of the epitaxial layer is divided into an initial growth stage, an intermediate growth stage and an end growth stage, and the usage amount of the purge gas in the intermediate growth stage is greater than the usage amount of the purge gas in the initial growth stage and the end growth stage. The growth method canreduce the generation of surface particles in the growth process of the epitaxial wafer, forms an excellent surface, and guarantees the light-emitting effect of the miniature light-emitting diode.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a method for growing micro-LED epitaxial wafers. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, LED is a new generation of light source with broad prospects, and is being rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, indoor and outdoor display screens and small-pitch displays. screen and other fields. [0003] The epitaxial wafer is the primary product in the LED manufacturing process. In related technologies, when growing LED epitaxial wafers, the usual method is: provide a substrate, and grow a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer, an electron b...

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Problems solved by technology

Wherein, during the growth process of the above-mentioned epitaxial wafer in the reaction chamber, some by-products generated during the growth will be deposited on the side wall of the reaction chamber, so that the impurity content in the reaction chamber will increase, and will eventually fall onto the epitaxial wafer. Particles are generated on the surface, which affects the crystal quality of the epitaxial wafer

Especially for small micro-LEDs, the sum of the volumes of particles falling on the surface of the micro-LEDs may be greater than the volume of the micro-LEDs, resulting in failure of the micro-LEDs

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