Semiconductor laser chip and process for resisting electrostatic shock

Abstract

The invention discloses a semiconductor laser chip capable of resisting electrostatic impact. The electrode table area of ​​the semiconductor laser chip is provided with a truncated conical structure arranged in an array. The inside of the truncated conical structure is an N-type reverse layer. The surrounding outer walls are covered with an insulating dielectric layer and a P-surface electrode layer in sequence, and the N-type reverse layer on the top of the truncated cone is covered with a highly doped P-type contact layer and a ring-shaped P-surface electrode layer in turn; the electrode table below the truncated cone structure The region includes a lower highly doped P-type contact layer, a P-type upper cladding layer, and a quantum well active region from top to bottom. In the present invention, when a large amount of charges are injected, static charges can be leaked through multiple channels, which improves the ability of the chip itself to resist ESD.

Description

technical field [0001] The invention relates to a semiconductor laser, in particular to a semiconductor laser chip and a process for resisting electrostatic shock. Background technique [0002] Both semiconductor laser chips and electric chips are static-sensitive devices, and they are faced with the threat of four modes of electrostatic shock (Electro-Static discharge ESD) in the production, testing, transportation, packaging and use of chips. These four modes of ESD are human body discharge mode, machine mode, component charging mode, and electric field induction mode, among which the human body discharge mode and machine mode have the greatest impact on semiconductor laser chips. [0003] Taking the human body discharge mode and ridge waveguide type 25G 1310nm DFB optical communication chip as an example, when the human body carries a large amount of electrostatic charge and touches the laser chip or the packaged TO pin, the electrostatic charge will mainly be loaded on t...

AI Technical Summary

Problems solved by technology

Compared with the electronic chip, the size of the optical chip is small and it is difficult to integrate a special electrostatic discharge circuit on the chip. At the same time, due to the small size of the optical chip, the ability to resist static shock is far weaker than that of the larger electronic chip. Therefore, the optical chip is facing more Serious Electrostatic Shock Threat

The existing anti-ESD solutions for optical chips are mainly to add electrostatic discharge circuits in the package and ESD protection for equipment and personnel during production, but the above solutions have many disadvantages such as high cost, large size, undetectable and unavoidable

Images