nor Flash programming method, modeling method and memory-computing integrated chip

Abstract

The present invention provides a Nor Flash programming method, a modeling method, and an integrated storage and calculation chip. The method includes: judging whether the absolute value of the difference between the target current of the flash memory unit and the current current is greater than a preset threshold; if so, judging Whether the current current is greater than the target current; if the current current is greater than the target current, the write voltage is obtained according to the current current, the target current and the write voltage model, and the programming circuit is controlled to write the write voltage The input voltage is applied to the flash memory cell; if the current current is less than the target current, the erasing voltage is obtained according to the current current, the target current and the erasing voltage model, and the programming circuit is controlled to apply the erasing voltage To the flash memory unit, that is, directly obtain the write voltage or erase voltage by using the write voltage model or the erase voltage model, which saves the iterative process of update-verify.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a Nor Flash programming method, a modeling method, and a Nor Flash-based storage-computing integrated chip. Background technique [0002] When Nor Flash is used as a memory (only for storing data), the data stored in each unit is generally 1 to 4 bits. Therefore, the maximum number of states for each unit is 2 to 16. The programming method is relatively simple, and the update- The iterative method of update-and-verify is programmed to ensure that the final state is consistent with the target state. The specific process is as follows: Assuming that the initial state is a fully deleted state (that is, there is no electron in the floating gate), each write (injection electrons), read its current, if the current read current is greater than the target current, continue to write (inject electrons), and then check the relationship between the read current and the target current;...

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention provides a Nor Flash programming method and device, a modeling method, a Nor Flash-based storage and calculation integrated chip, and a computer-readable storage medium, so as to solve the problem that the existing programming method cannot meet the requirements of the Nor Flash-based storage and calculation integration. Chip requirements lead to increased programming complexity, delay and power consumption overhead

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