Nor Flash programming method, Nor Flash modeling method and storage and calculation integrated chip

Abstract

The invention provides an Nor Flash programming method, an Nor Flash modeling method and a storage and calculation integrated chip. The Nor Flash programming method comprises the steps of judging whether an absolute value of a difference value between a target current of a flash memory unit and a current is greater than a preset threshold value or not; if so, judging whether the current is largerthan the target current or not; if the current current is greater than the target current, obtaining a write-in voltage according to the current current, the target current and a write-in voltage model, and controlling a programming circuit to apply the write-in voltage to the flash memory unit; if the current current is smaller than the target current, obtaining an erase voltage according to thecurrent current, the target current and an erase voltage model, and controlling a programming circuit to apply the erase voltage to the flash memory unit, i.e., directly obtaining a write-in voltage or an erase voltage by utilizing a write-in voltage model or an erase voltage model, and removing a repeated iteration process of updating and checking.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a Nor Flash programming method, a modeling method, and a Nor Flash-based storage-computing integrated chip. Background technique [0002] When Nor Flash is used as a memory (only for storing data), the data stored in each unit is generally 1 to 4 bits. Therefore, the maximum number of states for each unit is 2 to 16. The programming method is relatively simple, and the update- The iterative method of update-and-verify is programmed to ensure that the final state is consistent with the target state. The specific process is as follows: Assuming that the initial state is a fully deleted state (that is, there is no electron in the floating gate), each write (injection electrons), read its current, if the current read current is greater than the target current, continue to write (inject electrons), and then check the relationship between the read current and the target current;...

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention provides a Nor Flash programming method and device, a modeling method, a Nor Flash-based storage and calculation integrated chip, and a computer-readable storage medium, so as to solve the problem that the existing programming method cannot meet the requirements of the Nor Flash-based storage and calculation integration. Chip requirements lead to increased programming complexity, delay and power consumption overhead

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