Organic light-emitting device and display device
An electroluminescence device and electroluminescence technology, which are applied in electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of low lifespan, high device operating voltage, serious dye carrier capture, etc., and achieve improved lifespan, The effect of reducing the operating voltage
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[0096] The invention also provides a preparation method of the organic electroluminescence device, which comprises sequentially depositing an anode, a hole transport region, a light-emitting layer, an electron transport region and a cathode on a substrate, and then encapsulating. Wherein, when preparing the light-emitting layer, a multi-source co-evaporation method is used. The deposition methods of the anode, the hole transport region, the electron transport region and the cathode are the same as the existing methods in the art.
[0097] An embodiment of the present invention also provides a display device, which includes the organic electroluminescent device as provided above. Specifically, the display device may be a display device such as an OLED display, and any product or component having a display function such as a TV, a digital camera, a mobile phone, a tablet computer, etc. including the display device. The display device has the same advantages as that of the above...
Embodiment 1-11
[0099] Embodiment 1-11, comparative example 1
[0100] The above-mentioned embodiments and comparative examples respectively provide an organic electroluminescent device, and the preparation method is as follows:
[0101] (1) The glass plate coated with the ITO transparent conductive layer is ultrasonically treated in a commercial cleaning agent, rinsed in deionized water, ultrasonically degreased in acetone: ethanol mixed solvent, and baked in a clean environment until the water is completely removed , cleaning with UV light and ozone, and bombarding the surface with a beam of low-energy cations;
[0102] (2) Place the above-mentioned glass substrate with the anode in a vacuum chamber, and evacuate to less than 1×10 -5 Pa, vacuum-deposit HI-3 on the above-mentioned anode layer film as a hole injection layer, the evaporation rate is 0.1nm / s, and the evaporation film thickness is 2nm;
[0103] (3) The hole transport layer HT-28 is vacuum evaporated on the hole injection layer...
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