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Multi-junction solar cell

A technology of solar cells and sub-cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as voltage loss, and achieve the effect of high lateral conductivity and small loss

Pending Publication Date: 2020-10-16
AZUR SPACE SOLAR POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, a significant voltage loss of about 160 mV still occurs here compared to pure InAlGaP cells

Method used

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Examples

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Embodiment Construction

[0056] figure 1 The image in shows a view of a first embodiment of a stacked multi-junction solar cell MJ comprising a stack consisting of a substrate layer SUB, a lowermost subcell C1, a middle subcell C2 and an uppermost subcell C3 ST. A flat connection layer K1 is formed on the underside of the stack ST. Connecting fingers K2 , K3 are arranged on the upper side of the stack.

[0057] Each sub-cell C1, C2, and C3 has a base B1, B2, B3 and an emitter E1, E2, E3, respectively, wherein the emitter E3 and the base B3 of the uppermost sub-cell C3 are made of III-V semiconductor materials composition.

[0058] The emitter E3 of the uppermost sub-cell C3 comprises a superlattice SL. The superlattice includes a plurality of thin well layers QW with a thickness of D2 and a plurality of thin barrier layers BA with a thickness of D1, wherein the well layers QW and the barrier layers BA are alternately stacked on each other. The total thickness D of the superlattice SL From the th...

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Abstract

The invention relates to a stacked multi-junction solar cell (MJ) comprising a stack (ST) of a lowermost sub-cell (C1), at least one middle sub-cell (C2) and an uppermost sub-cell (C3), wherein each sub-cell (C1, C2, C3) comprises an emitter (E1, E2, E3) and a base (B1, B2, B3), at least the uppermost sub-cell (C3) consists of a III-V semiconductor material or comprises a III-V semiconductor material and the emitter (E3) of the uppermost sub-cell (C3) comprises a superlattice.

Description

technical field [0001] The present invention relates to a multi-junction solar cell. Background technique [0002] In order to make better use of the solar spectrum, multi-junction solar cells usually include three or more subcells with different and mutually coordinated bandgaps, wherein the uppermost subcell has the largest bandgap, and The lowermost subcell has the smallest bandgap, and the uppermost subcell is located on the sun-facing side of the multijunction solar cell. [0003] Such multijunction solar cells are known, for example, from the report "Development of Upright Metamorphic 4J SpaceSolar Cells" by W. Guter et al., Space Dynamics Studio 2017, Manhattan Beach, California. [0004] In lattice-matched multijunction solar cells on germanium substrates, the uppermost subcell of the multijunction solar cell—hereinafter also called the upper cell (Oberzelle)—is usually composed of InGaP with a band spacing of about 1.88eV . [0005] The open circuit terminal volt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0687H01L31/0352
CPCH01L31/035236H01L31/0687Y02E10/544H01L31/03046
Inventor D·富尔曼G·凯勒R·范莱斯特
Owner AZUR SPACE SOLAR POWER
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