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Manufacturing process of SMD2016high fundamental frequency resonator

A technology of SMD2016 and manufacturing process, applied to electrical components, impedance networks, etc., can solve the problems of unsuitable 5G communication equipment, slow frequency scanning operation speed, high price, etc., to avoid chip running, solve chip layout, and avoid deformation Effect

Inactive Publication Date: 2020-10-16
江苏浩都频率科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the frequency devices in the high-frequency band in the domestic market are mainly high-frequency overtone chip resonators and active oscillators. The chip thickness of high-frequency overtone chip resonators is 3 times or 5 times that of fundamental frequency resonators, but the disadvantage is frequency sweeping The operating speed is slow and it is not suitable for 5G communication equipment. The main technology of SMD2016 high-frequency fundamental frequency resonators is still in the hands of Japanese companies, and the price is high. At present, there is no mature UHF fundamental frequency resonator manufacturing process in China.

Method used

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  • Manufacturing process of SMD2016high fundamental frequency resonator
  • Manufacturing process of SMD2016high fundamental frequency resonator
  • Manufacturing process of SMD2016high fundamental frequency resonator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Design and manufacture 2016 / 80.000MHz / 9pF high fundamental frequency crystal resonator, the specifications require FL:±10ppm; C0:1.05±0.2Pf; C1:3.5±0.5pF; RR<30Ω, combined with the formula C0=0.0402×A×f standard ÷K+(0.2~0.6), match the size of the design positioning sheet, upper mask plate and lower mask plate as follows:

[0044] Positioning piece: 2016 / 672 bits / A2615 / 1.31*0.91*0.13mm

[0045] Upper mask plate: B2604 UP MASK / 0.70*0.60*0.08mm, convex layer thickness 0.05mm

[0046] Lower mask: B2604 DN MASK / 0.70*0.60*0.08mm, convex layer thickness 0.05mm.

[0047] According to the design of the present invention, mass production can meet the specification conditions, and the normal temperature data are as follows:

[0048]

[0049] Drop reliability test standard: drop 6 times from a height of 150cm, no fragments, ΔFL<3ppmΔRR<3Ω, the comparison data are as follows:

[0050]

Embodiment 2

[0051] Example 2: Design and manufacture of 2016 / 96.000MHz / 9pF high fundamental frequency crystal resonator, specifications require FL: ±10ppm; C0:0.85±0.1Pf; C1:3±0.5pF; RR<20Ω, combined with the formula C0=0.0402× A × f standard ÷ K + (0.2 ~ 0.6), wafer design size: 0.787 * 0.611 * 0.017, matching the design of the plated jig, the dimensions of the positioning piece, upper mask plate, and lower mask plate are as follows:

[0052] Positioning piece: 672 bits / A1607 / 1.07*0.69*0.12mm

[0053] Upper mask plate: B1607 UP MASK / 0.50*0.50*0.08mm, convex layer thickness 0.05mm

[0054] Lower mask: B1607 DN MASK / 0.50*0.50*0.08mm, convex layer thickness 0.05mm.

[0055] According to the design of the present invention, mass production can meet the specification conditions, and the normal temperature data are as follows:

[0056]

[0057]

[0058] Drop reliability test standard: drop 6 times from a height of 150cm, no fragments, ΔFL<3ppm, ΔRR<3Ω, the comparison data are as follow...

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Abstract

The invention discloses a manufacturing process of a SMD2016 high fundamental frequency resonator. The method comprises the following steps: pre-washing, arranging, post-washing, coating, dispensing,curing, fine adjustment, seal welding, aging, reflow welding, leakage detection, testing of lettering braids, packaging and warehousing. According to the manufacturing process, each electrode groove on a upper mask sheet and a lower mask sheet is provided with one convex layer, and in the production and arrangement process, a high-fundamental-frequency wafer can be effectively fixed in a positioning groove through the convex layers of the lower mask sheet and the upper mask sheet. An LED 24V coaxial light source is added for a wafer identification function; during operation, various CCD recognition functions of an annular light source and the coaxial light source are turned on at the same time, higher-frequency point light-transmitting wafers can be effectively recognized, all the wafers with different light-transmitting degrees in high, medium and low frequency bands can be universally used by adjusting the light sources, and the technical problem that wafer arrangement and dispensingrecognition are not good is solved.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a manufacturing process based on an SMD2016 high fundamental frequency resonator. Background technique [0002] With the rapid development of the 5G industry, the market demand for Wi-Fi6 and 5G communication equipment is increasing rapidly, which requires faster operation speed, so the demand for UHF base frequency resonator products is also gradually increasing. At present, the frequency devices in the high-frequency band in the domestic market are mainly high-frequency overtone chip resonators and active oscillators. The chip thickness of high-frequency overtone chip resonators is 3 times or 5 times that of fundamental frequency resonators, but the disadvantage is frequency sweeping The operating speed is slow and it is not suitable for 5G communication equipment. The main technology of SMD2016 high-frequency fundamental frequency resonators is still in the hands of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/00
CPCH03H3/00
Inventor 王秋贞吴佳斌祝希坚
Owner 江苏浩都频率科技有限公司
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