Bragg grating, preparation method thereof and distributed feedback laser

Abstract

The invention provides a Bragg grating, a preparation method thereof and a distributed feedback laser, and belongs to the technical field of semiconductor lasers. The Bragg grating is arranged in a distributed feedback laser. The Bragg grating comprises a lower grating waveguide layer, a middle grating waveguide layer and an upper grating waveguide layer which are sequentially formed and have different refractive indexes; the refractive index of the middle grating waveguide layer is lower than the refractive index of the lower grating waveguide layer and the refractive index of the upper grating waveguide layer; the doping types of the lower grating waveguide layer and the middle grating waveguide layer are the same; the doping type of the upper grating waveguide layer is opposite to the doping types of the adjacent layers, so that a reverse biased PN junction can be formed on the upper grating waveguide layer; a plurality of grooves are formed in the upper grating waveguide layer at intervals in the cavity length direction of the distributed feedback laser; and the grooves are filled with buried layers to flatten the upper grating waveguide layer. The coupling coefficient of the Bragg grating can be increased along with the increase of the current of the distributed feedback laser, so that the cavity loss of the distributed feedback laser is reduced, and the response bandwidthis expanded.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a Bragg grating, a preparation method thereof, and a distributed feedback laser. Background technique [0002] With the development of data centers and optical fiber access networks, there is an increasing demand for low-cost, high-bit-rate communication systems. In order to reduce the cost as much as possible, direct modulation semiconductor lasers (usually distributed feedback lasers) are generally used as light sources in such systems to save the additional complexity and corresponding costs brought about by external modulators. [0003] In the current distributed feedback semiconductor laser, the conventional grating design makes the increase of the injection current cause the decrease of its coupling coefficient (because when the carriers flow through the narrow bandgap material, according to the Kramers-Kronig relationship, the refractive index will be higher t...

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Problems solved by technology

[0003] In the current distributed feedback semiconductor laser, the conventional grating design makes the increase of the injection current cause the decrease of its coupling coefficient (because when the carriers flow through the narrow bandgap material, according to the Kramers-Kronig relationship, the refractive index will be higher than that of the wide bandgap material There is a larger drop, so that the increase of the injection current will reduce the refractive index di...

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