Integrated Semiconductor Amplifiers on Silicon Substrates

A semiconductor and amplifier technology, applied in the field of integrating semiconductor amplifiers on silicon substrates, can solve problems such as material system incompatibility, and achieve high gain, easy implementation, and low loss.

Active Publication Date: 2021-08-03
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, limited by the incompatibility of material systems, silicon-based semiconductor optical amplifiers that can be used practically have not yet made breakthroughs, so semiconductor amplifiers with lnP-based materials can only be used. How to realize silicon-based photonic integrated chips and lnP-based On-chip integration of semiconductor amplifiers is the key to solving the problem

Method used

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  • Integrated Semiconductor Amplifiers on Silicon Substrates
  • Integrated Semiconductor Amplifiers on Silicon Substrates
  • Integrated Semiconductor Amplifiers on Silicon Substrates

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Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0035] An embodiment of the present invention provides an integrated semiconductor amplifier on a silicon substrate, please refer to figure 1 shown, including:

[0036] The mode field modulator 2 is mainly made of polymer material, and it is designed to include an object stage and at least one set of optical transmission waveguides opposite to the object stage, and each set of optical transmission waveguides includes an optical input waveguide and an optical output waveguide;

[0037] InP-based semiconductor amplifier 1 is placed on the stage and has an optical waveguide path, and the light of the optical input waveguide is amplified by the optical waveguide path and then transmitted to the optical output waveguide;

[0...

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Abstract

The invention discloses an integrated semiconductor amplifier on a silicon substrate, comprising: a mode field controller, which is made of polymer material, and is designed on it to include an object stage and at least one group of optical transmission waveguides opposite to the object stage, each The set of optical transmission waveguides includes an optical input waveguide and an optical output waveguide; an InP-based semiconductor amplifier is placed on the stage and has an optical waveguide path, and the light of the optical input waveguide is amplified by the optical waveguide path and then transmitted to the optical output waveguide; and the mode spot The transformer, using polymer material, serves as a connecting component between the optical input waveguide, the optical waveguide channel and the optical output waveguide. The integrated semiconductor amplifier on the silicon substrate provided by the present invention uses hybrid integration technology to realize the heterogeneous integration between the lnP-based semiconductor amplifier and the silicon-based photonic chip, and uses the mode field controller to complete the optical mode field of the lnP-based waveguide and the silicon-based waveguide Matching, coupling and transmission, and finally realize the integrated optical amplifier on silicon substrate with low loss and high gain.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to an integrated semiconductor amplifier on a silicon substrate. Background technique [0002] With the increase in the scale of photonic integrated chips, the number of active devices integrated on the chip increases, which inevitably leads to an increase in the on-chip loss of optical power, resulting in a significant attenuation of signal strength, which reduces the signal-to-noise ratio and cannot fully utilize the photonic integrated chip. maximum potency. Therefore, optical amplification technology needs to be introduced to compensate the signal gain. However, limited by the incompatibility of material systems, silicon-based semiconductor optical amplifiers that can be used practically have not yet made breakthroughs, so semiconductor amplifiers with lnP-based materials can only be used. How to realize silicon-based photonic integrated chips and lnP-based On-chip integr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/124G02B6/12
CPCG02B6/12G02B6/124G02B2006/12035G02B2006/12038G02B2006/12085G02B2006/12133G02B2006/12152
Inventor 张志珂戴双兴赵泽平刘建国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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