High-temperature gate bias test method and device capable of measuring threshold voltage

Abstract

The invention relates to a high-temperature gate bias test method and device, in particular to a high-temperature gate bias test method and device capable of measuring threshold voltage, and belongs to the technical field of power semiconductor device high-temperature gate bias test. According to the method disclosed in a technical scheme provided by the invention, the device for the high-temperature gate bias test method capable of measuring the threshold voltage comprises HTGB test equipment; the HTGB test equipment comprises a test connection circuit which can be adaptively connected with ato-be-tested device and a switch switching circuit which can switch the test state of the to-be-tested device. And the switch switching circuit is adaptively connected with the device to be tested and the test connection circuit, and the test connection circuit can perform HTGB test or threshold voltage measurement on the device to be tested through the switch switching circuit so as to perform threshold voltage measurement in the HTGB test of the device to be tested. The high-temperature gate bias test and the threshold voltage measurement can be conveniently performed on the power semiconductor device, the test efficiency is improved, and safety and reliability are realized.

Description

technical field [0001] The invention relates to a high-temperature grid bias test method and device, in particular to a high-temperature grid bias test method and device capable of measuring threshold voltage, and belongs to the technical field of high-temperature grid bias test of power semiconductor devices. Background technique [0002] The high temperature gate bias test (HTGB: High Temperature Gate Bias) is an accelerated life test. During the test, a specific voltage is applied to the gate of the sample to be tested (a type of device with a MOS gate structure, such as IGBT, MOSFET, HEMT, etc.), and then the sample is placed in a high temperature environment at a specific temperature (such as 125°C) for a specific time (eg 1000 hours). By applying such harsh environment and electrical stress to the device to be tested to investigate whether the characteristics of the sample to be tested will be degraded, thereby judging or evaluating the quality of the sample to be tes...

AI Technical Summary

Problems solved by technology

[0010]1), the test is very cumbersome, it is necessary to use two kinds of test equipment to measure the sample, and it is necessary to load and unload the sample frequently on the two test equipment

[0011]2), it takes up more manpower, and the test efficiency is low, resulting in a long test cycle

[0012]3), the test data is generated by two devices, and finally the data needs to be integrated and analyzed manually, resulting in a heavy workload of data analysis

[0013]4), the threshold voltage measurement needs to be completed within the specified time (for example, within 48 hours) in the middle or after the shutdown, when there are too many devices or static test equipment resources Risk of not completing the test on time when insufficient

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