Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Radar/infrared compatible stealth metasurface

Active Publication Date: 2020-08-25
XI AN JIAOTONG UNIV
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problem of complex structure and poor performance of radar and infrared compatible stealth materials in the prior art, the present invention provides a radar / infrared compatible stealth metasurface, the radar / infrared compatible stealth metasurface is composed of a conductive reflective layer-dielectric layer- Conductor thin film functional layer sandwich structure, simple structure, only one layer of artificial structure unit array can make the above structure realize the compatibility of radar and infrared stealth at the same time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Radar/infrared compatible stealth metasurface
  • Radar/infrared compatible stealth metasurface
  • Radar/infrared compatible stealth metasurface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A radar / infrared compatible stealth metasurface, starting from the conductive metal copper reflective layer 1, from bottom to top, including FR4 dielectric layer 2 and conductive thin film functional layer 3, the thickness of the conductive metal copper reflective layer 1 is 0.02mm, and the FR4 dielectric layer The thickness is 1.5mm, the real part of the relative permittivity is 10, the loss tangent value is 0.2, and the functional layer of the conductor film is a metal copper film. The large unit II32 is arranged in a 6×6 array structure according to the checkerboard structure; the large patch unit I31 is arranged in a 26×26 structure by the small patch unit I311 with a size of 1.05mm, and the large patch unit II32 is composed of small patch units with a size of 2.97mm The small patch unit II321 is arranged in a 10×10 structure, the thickness of the patch small unit I311 and the patch small unit II321 are both 0.02mm, the gap between two adjacent patch small units I311...

Embodiment 2

[0042]A radar / infrared compatible stealth metasurface, starting from the conductive metal copper reflective layer 1, from bottom to top, including FR4 dielectric layer 2 and conductive thin film functional layer 3, the thickness of the conductive metal copper reflective layer 1 is 0.02mm, and the FR4 dielectric layer The thickness is 3.8mm, the real part of the relative permittivity is 5, the loss tangent value is 0.001, and the functional layer of the conductor film is a metal copper film. The large unit II32 is arranged in a 6×6 array structure according to the checkerboard structure; the large patch unit I31 is arranged in a 56×56 structure by the small patch unit I311 with a size of 0.7mm, and the large patch unit II32 is composed of small patch units with a size of 6.3mm The small patch unit II321 is arranged in an 8×8 structure, the thickness of the patch small unit I311 and the patch small unit II321 are both 0.02mm, the gap between the adjacent patch small units I311, t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a radar / infrared compatible stealth metasurface, which belongs to the technical field of novel artificial electromagnetic materials. The metasurface comprises a conductive reflection layer, a dielectric layer and a conductor film functional layer which are sequentially arranged from bottom to top; the conductor film functional layer is of an M * M array structure of patch large units I and patch large units II; each patch large unit I is of an n1 * n1 array structure composed of patch small units I, and each patch large unit II is of an n2 * n2 array structure composedof patch small units II; M is an even number; the patch large units I and the patch large units II are the same in size and number; the patch small units I and the patch small units II are different in size. The metasurface is composed of a conductive reflection layer-dielectric layer-conductor film functional layer sandwich structure, the structure is simple, and radar and infrared stealth compatibility of the structure can be achieved at the same time only through one layer of artificial structure unit array.

Description

technical field [0001] The invention belongs to the technical field of novel artificial electromagnetic materials, and in particular relates to a radar / infrared compatible stealth metasurface. Background technique [0002] Absorbing material is one of the main technical approaches to realize radar stealth, but it reduces radar echo through electromagnetic wave absorption, which is in contradiction with the infrared low emission stealth mechanism. Therefore, realizing radar and infrared compatible stealth has always been the focus of attention in the field of stealth technology. The traditional method is to spray a layer of infrared low-emissivity coating on the surface of the absorbing material, but this often leads to the decline of radar absorbing performance. With the development of new artificial electromagnetic materials, the deficiencies of traditional technologies can be better solved through the designability and frequency selection characteristics of artificial stru...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01Q17/00H01Q15/00
CPCH01Q15/0086H01Q17/008
Inventor 庞永强屈冰玥夏颂徐卓
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com