Crystal growth apparatus and crystal growth method

Abstract

The invention provides a crystal growth device and a crystal growth method. The growth device comprises a shell which defines a cavity and is provided with a first opening and a second opening which are oppositely arranged; a heat preservation layer is arranged on the inner wall of the shell; a crucible is surrounded by the heat preservation layer and is used for containing molten soup; a heater is arranged between the crucible and the heat preservation layer; a cooling sleeve is arranged below the first opening; a heat shield is arranged below the cooling sleeve and consists of a plurality ofmolybdenum sheets which are arranged in parallel; and a first micro heater is arranged below the heat shield and extends in the horizontal direction. According to the invention, heat energy loss on the crystal surface can be effectively prevented; compared with the prior art, the method has the advantages that the axial temperature gradient of the crystal is increased, the radial temperature gradient of the crystal can be reduced, the crystallization rate of the large-size crystal with the size of 12 inches or above is increased, the good time is maintained within the range of 1300-1400 DEG C, defects are fully discharged out of the crystal, and then the approximately perfect crystal is grown.

Description

technical field [0001] The invention relates to the technical field of semiconductor crystal growth equipment, in particular to a crystal growth device and a growth method. Background technique [0002] In order to meet the requirement of gradually reducing the line width of existing semiconductor devices, it is best to grow defect-free crystals. In order to produce defect-free crystals with high yield, it is necessary to control the axial temperature gradient G and the radial temperature gradient G(r) at the solid-liquid interface. Because the thermal field distribution in the crystal growth equipment directly affects G and G(r) at the solid-liquid interface, but as the crystal diameter increases, it becomes very difficult to control G(r), especially for large crystals of 12 inches and above. In addition, during the crystal pulling process of large-sized crystals, it is necessary to increase the axial temperature gradient at the solid-liquid interface to ensure smooth pull...

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Problems solved by technology

[0003] In the prior art, during the crystal pulling process, the heat in the crystal is always dissipated through its surface, which will cause the axial center temperature gradient Gc to be smaller than the edge temperature gradient Ge. According to the V / G theory, there are more vacancy defects formed at the end of the crystal. The V-rich region of the V-rich region and the I-rich region with more gap defects formed at the tail, for details, refer to Image 6 As shown, the perfect crystal region (Pv, Pi) is very narrow

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