Preparation method of suspended graphene structure, suspended graphene structure obtained by preparation method and application thereof

A technology of graphene and graphene sheets, applied in the direction of single-layer graphene, chemical instruments and methods, carbon compounds, etc., can solve the problem that suspended graphene cannot be transferred and applied, and achieve the effect of easy removal and simple operation

Pending Publication Date: 2020-06-23
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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Problems solved by technology

Although the patent application does not apply etching technology, the prepared suspended graphene cannot be transferred

Method used

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  • Preparation method of suspended graphene structure, suspended graphene structure obtained by preparation method and application thereof
  • Preparation method of suspended graphene structure, suspended graphene structure obtained by preparation method and application thereof
  • Preparation method of suspended graphene structure, suspended graphene structure obtained by preparation method and application thereof

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Embodiment 1

[0046] A preparation method for a suspended graphene structure, comprising the steps of:

[0047] (1) if figure 1 As shown, the film to be treated was prepared by spin coating and tape stripping operations of the glue spinner;

[0048] Wherein, the membrane to be processed is composed of a substrate 1 , a sacrificial layer 2 , a graphene sheet 4 and an electron beam glue layer 3 arranged in sequence.

[0049] A PVA aqueous solution (with a solid content of 4%) was first dropped on a silicon wafer, spin-coated by a glue spinner and baked on a hot table to obtain a sacrificial layer. Then use tape to peel off the natural graphite, cover the tape with graphite flakes on the surface of the sacrificial layer, apply slight pressure with your hands, and after the tape is removed, some graphite flakes will remain on the sacrificial layer. Electron beam gel solution (6% by mass of anisole solution of PMMA with a molecular weight of 950K) was dropped on the sacrificial layer with a gr...

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Abstract

The invention provides a preparation method of a suspended graphene structure, the suspended graphene structure obtained by the preparation method and an application thereof, and the preparation method comprises the following steps: (1) patterning a to-be-treated membrane to obtain a patterned region and other regions; wherein the to-be-processed membrane comprises a sacrificial layer, a graphenesheet layer and an electron beam adhesive layer which are arranged in sequence; wherein the patterning treatment comprises the step of exposing a part of area of the graphene sheet; and (2) sequentially removing the rest area and the sacrificial layer, and then transferring the patterned area to the substrate to obtain the suspended graphene structure. The preparation method provided by the invention does not involve corrosive liquid, the operation process is simple, and the graphene is easy to transfer and assemble. The preparation method provided by the invention can realize the preparationof the suspended structures of the graphene materials with different shapes and different sizes, and can also be used for any substrate.

Description

technical field [0001] The invention belongs to the field of graphene preparation, and relates to a preparation method of a suspended graphene structure, a suspended graphene structure obtained therefrom and applications thereof. Background technique [0002] Graphene is a two-dimensional thin film of carbon atoms with a honeycomb structure. Due to its excellent electron mobility, single atomic layer thickness and ultra-high mechanical strength, it is considered to have broad application prospects in many fields such as information technology, semiconductors, biosensing, energy and environmental protection. [0003] In the field of semiconductor technology, graphene is considered to replace silicon as the basic material of next-generation semiconductor technology due to its excellent electrical properties. Traditional graphene is generally grown on or transferred to insulating substrates, and then used to prepare functional devices. However, the interaction between graphen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/194
CPCC01B32/194C01B2204/02
Inventor 宋学锋曾维军王尧
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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