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Image sensor and image processing method

An image sensor and pixel technology, applied in the field of image processing, can solve the problems of high power consumption, large pixel size, and large thickness of CMOS image sensors

Inactive Publication Date: 2020-06-05
GUANGDONG OPPO MOBILE TELECOMM CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Generally, the pixel array commonly used in CMOS image sensors is mainly composed of square pixel units, in which photodiode (Photo Diode, PD) structures are arranged for light absorption and photoelectric conversion; CMOS image sensors use square pixel units in a quadrangular array. Arrangement in the same way, using the pixel unit in the positive direction to absorb the corresponding RGB monochromatic light, at this time, the arrangement density of the square pixel unit is low, which leads to the problem of low resolution of the CMOS image sensor; usually the CMOS image sensor uses three layers of photosensitive The element records one of the color channels of RGB respectively. However, the existing three-layer photosensitive element has problems of large pixel size and high power consumption of CMOS image sensors due to the large thickness of each layer of photosensitive element.

Method used

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Embodiment 1

[0049] The embodiment of the present application provides an image sensor 1, such as figure 1 As shown, the image sensor 1 includes:

[0050] A triangular stacked pixel unit 10 composed of a triangular pixel unit 100 of the first layer and a triangular pixel unit 101 of the second layer, wherein the triangular pixel unit 100 of the first layer includes photodiode PD columns of two sizes, and the second The layered triangular pixel unit 101 includes PD pillars of one size other than the two sizes; the triangular stacked pixel unit 10 is used to absorb RGB three-color light by using three sizes of PD pillars, and convert the RGB three-color light The corresponding optical signal is converted into an electrical signal

[0051] The CMOS pixel readout circuit 11 connected to the output end of the delta stacked pixel unit 10 is used to amplify the electrical signal and read out the electrical signal.

[0052] An image sensor proposed in an embodiment of the present application is ...

Embodiment 2

[0099] An embodiment of the present application provides an image processing method, which is applied to an image sensor. The image sensor includes a triangular stacked pixel unit composed of a first layer of triangular pixel units and a second layer of triangular pixel units and a CMOS pixel readout circuit. The first layer The triangular pixel unit includes two sizes of PD columns, and the second layer of triangular pixel units includes PD columns of one size other than the two sizes, such as Figure 6 As shown, the method includes:

[0100] S101. Using PD pillars of two sizes in the triangular pixel unit on the first layer to respectively absorb two kinds of RGB monochromatic lights, and convert the optical signals corresponding to the two kinds of RGB monochromatic lights into electrical signals corresponding to the two kinds of RGB monochromatic lights.

[0101] An image processing method provided in an embodiment of the present application is applicable to a scenario whe...

Embodiment 3

[0116] An embodiment of the present application provides a storage medium on which a computer program is stored. The computer-readable storage medium stores one or more programs. The one or more programs can be executed by one or more processors and applied to image processing. In the sensor 1, the image sensor includes a triangular stacked pixel unit composed of a first layer of triangular pixel units and a second layer of triangular pixel units and a CMOS pixel readout circuit, and the first layer of triangular pixel units includes two sizes of PD columns, the triangular pixel units in the second layer include PD columns of one size other than the two sizes, and the computer program realizes the image processing method as described in the second embodiment.

[0117] Specifically, when the program instructions corresponding to an image processing method in this embodiment are read or executed by an electronic device, the following steps are included:

[0118] Using the two si...

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Abstract

The embodiment of the invention provides an image sensor and an image processing method. The image sensor comprises a triangular laminated pixel unit composed of a first layer of triangular pixel unitand a second layer of triangular pixel unit, wherein the first layer of triangular pixel unit comprises photodiode PD columns of two sizes, the second layer of triangular pixel unit comprises PD columns of one size except the two sizes, a triangular laminated pixel units are used for absorbing RGB three-color light by utilizing PD columns of three sizes and converting optical signals corresponding to the RGB three-color light into electric signals; and a CMOS pixel reading circuit which is connected with the output end of the triangular laminated pixel unit and is used for amplifying the electric signal and reading the electric signal.

Description

technical field [0001] The present application relates to the field of image processing, in particular to an image sensor and an image processing method. Background technique [0002] Complementary Metal-Oxide Semiconductor (CMOS, Complementary Metal-Oxide Semiconductor) image sensor (Complementary Metal-Oxide Semiconductor Image Sensor, CMOS Image Sensor) has the characteristics of high integration, low power consumption, fast speed and low cost. Pixel products are widely used. [0003] Generally, the pixel array commonly used in CMOS image sensors is mainly composed of square pixel units, in which photodiode (Photo Diode, PD) structures are arranged for light absorption and photoelectric conversion; CMOS image sensors use square pixel units in a quadrangular array. Arrangement in the same way, using the pixel unit in the positive direction to absorb the corresponding RGB monochromatic light, at this time, the arrangement density of the square pixel unit is low, which lead...

Claims

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Application Information

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IPC IPC(8): H04N5/374H04N5/378H04N5/369H01L27/146
CPCH01L27/14609H01L27/14645H04N25/76H04N25/79H04N25/75
Inventor 杨鑫
Owner GUANGDONG OPPO MOBILE TELECOMM CORP LTD
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