Wafer detection method, device and equipment

Abstract

The embodiment of the invention provides a wafer detection method, device and equipment. The method comprises the following steps: acquiring an image of a to-be-detected wafer; comparing each to-be-detected area with a corresponding area in the standard wafer, wherein the standard wafer comprises N areas, each area of the standard wafer is in one-to-one correspondence with each to-be-detected area, and the position of the to-be-detected area in the to-be-detected wafer is the same as the position of the corresponding area in the standard wafer, and if the difference between each to-be-detectedarea and the corresponding area of the standard wafer is within a preset range, determining that the to-be-detected wafer is a qualified wafer. The judgment standards of different areas in the waferfor defects are different, and defect detection is performed on each to-be-detected area so that the defect detection of the wafer is more flexible, and the detection accuracy is higher. The problem in the prior art that when defects of the wafer are detected, the detection standard for detecting whether the defects exist in the wafer is inflexible and the detection result of whether the defects exist in the wafer is inaccurate is solved, and thus the production cost is reduced.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductor manufacturing, and in particular to a wafer detection method, device and equipment. Background technique [0002] Wafer refers to the silicon chip used in the production of silicon semiconductor integrated circuits. It is the carrier used in the production of integrated circuits (IC). Therefore, the quality of the wafer directly affects the yield rate and manufacturing cost of the chip. In the process of making wafers, it is inevitable that some wafers will have defects. For example, during the photolithography process, due to the unevenness of the wafer surface, defects such as focusing spots and chromatic aberrations will be caused. Therefore, it is necessary to inspect the wafer to obtain a standard wafer. [0003] In the prior art, a wafer inspection system (wafer inspect system, WIS) is used to take pictures of the wafer before and after photolithography, and the ...

AI Technical Summary

Problems solved by technology

In the process of making wafers, it is inevitable that some wafers will have defects. For example, during the photolithography process, due to the uneven surface of the wafer, it will cause defects such as focusing spots and chromatic aberration.

[0004] However, when using the image detection method and detection standard that comes with WIS to perform defect detection on the pictures before and after photolithography of the wafer to determine the wafer with defects, due to the image detection method and inspection standards that come with WIS The inspection standard is very inflexible. In some scenarios, it is possible to determine some wafers with negligible small defects as unqualified wafers, or determine the defective wafers as qualified wafers, then according to the wafers obtained The chip has quality problems, which increases the production cost

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