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Antiferroelectric ceramic material with excellent charging and discharging performance and preparation method thereof

A ceramic material and antiferroelectric technology, which is applied in the field of antiferroelectric ceramic materials and its preparation, can solve the problems of poor energy storage performance of antiferroelectric materials, and achieve the effect of high activity and simple preparation method

Active Publication Date: 2020-06-05
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide an antiferroelectric ceramic material with excellent charge and discharge performance and a preparation method thereof to overcome the defects in the above-mentioned prior art, so as to solve the problem of poor energy storage performance of existing antiferroelectric materials

Method used

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  • Antiferroelectric ceramic material with excellent charging and discharging performance and preparation method thereof
  • Antiferroelectric ceramic material with excellent charging and discharging performance and preparation method thereof
  • Antiferroelectric ceramic material with excellent charging and discharging performance and preparation method thereof

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preparation example Construction

[0037] The preparation method of the above-mentioned antiferroelectric ceramic material comprises the following steps:

[0038]1) Mix the lead source, barium source, lanthanum source, zirconium source, tin source, and titanium source, and after ball milling, drying, and calcination in sequence, a calcined powder is obtained;

[0039] 2) The calcined powder is subjected to high-energy ball milling and drying in sequence to obtain a dry powder, and then the dry powder is mixed with a polyvinyl alcohol solution, and then successively granulated and pressed to obtain a ceramic green body;

[0040] 3) The antiferroelectric ceramic material is obtained after the ceramic body is sequentially subjected to debinding and sintering processes.

[0041] Wherein, in step 1), lead source comprises Pb 3 o 4 , the barium source includes BaCO 3 , lanthanum sources include La 2 o 3 , zirconium sources include ZrO 2 , tin sources include SnO 2 , titanium sources include TiO 2 And the Pb u...

Embodiment 1

[0046] A chemical formula is (Pb 0.96 Ba 0.01 La 0.02 )(Zr 0.6 sn 0.4 )O 3 The antiferroelectric ceramic material, its preparation method comprises the following steps:

[0047] 1) Select Pb with a purity greater than 99% 3 o 4 、BaCO 3 , La 2 o 3 , ZrO 2 , SnO 2 As the raw material of the antiferroelectric ceramic material, it is weighed and mixed according to the chemical composition to obtain the mixture;

[0048] 2) After the mixture is ball milled for 15 hours, discharged, dried, and calcined at 900°C for 3 hours, calcined powder is obtained;

[0049] 3) The calcined powder is subjected to high-energy ball milling, discharging and drying for 2 hours in sequence to obtain dry powder;

[0050] 4) Mix the dry powder with 8wt% polyvinyl alcohol solution (the amount of polyvinyl alcohol solution added is 0.3mL polyvinyl alcohol solution / g dry powder), and then successively undergo granulation and compression molding under 6MPa to obtain ceramics Embryo;

[0051] ...

Embodiment 2

[0053] A chemical formula is (Pb 0.95 Ba 0.02 La 0.02 )(Zr 0.6 sn 0.4 )O 3 The antiferroelectric ceramic material, its preparation method comprises the following steps:

[0054] 1) Select Pb with a purity greater than 99% 3 o 4 、BaCO 3 , La 2 o 3 , ZrO 2 , SnO 2 As the raw material of the antiferroelectric ceramic material, it is weighed and mixed according to the chemical composition to obtain the mixture;

[0055] 2) After the mixture is ball milled for 15 hours, discharged, dried, and calcined at 900°C for 3 hours, calcined powder is obtained;

[0056] 3) The calcined powder is subjected to high-energy ball milling, discharging and drying for 2 hours in sequence to obtain dry powder;

[0057] 4) Mix the dry powder with 8wt% polyvinyl alcohol solution (the amount of polyvinyl alcohol solution added is 0.3mL polyvinyl alcohol solution / g dry powder), and then successively undergo granulation and compression molding under 6MPa to obtain ceramics Embryo;

[0058] ...

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Abstract

The invention relates to an antiferroelectric ceramic material with excellent charging and discharging performances and a preparation method of the antiferroelectric ceramic material. The chemical general formula of the antiferroelectric ceramic material is (Pb0.97-xBaxLa0.02)(ZrySn1-y-zTiz)O3, the preparation method comprises the following steps: mixing a lead source, a barium source, a lanthanumsource, a zirconium source, a tin source and a titanium source, sequentially carrying out ball milling, drying and calcining, and sequentially carrying out secondary ball milling, drying, mixing witha polyvinyl alcohol solution, granulating, compression molding, glue discharge and sintering to obtain the antiferroelectric ceramic material. Compared with the prior art, the effective energy storage density of the prepared antiferroelectric ceramic material can reach 12.8 J / cm<3>, the energy storage efficiency can reach 84.2%, the current density can reach 1815 A / cm<2>, the discharge period canreach 51.6 ns, the power density can reach 327 MW / cm<3>, and very excellent charge and discharge performance is shown.

Description

technical field [0001] The invention belongs to the technical field of functional ceramics, and relates to an antiferroelectric ceramic material with excellent charge and discharge performance and a preparation method thereof, in particular to an antiferroelectric ceramic material with high energy storage density, high energy storage efficiency, large discharge current, and high power density. Properties of antiferroelectric ceramic materials and their preparation methods. Background technique [0002] With the advancement of science and technology, pulse power technology has been widely used in various fields such as industry, construction, biomedicine and cutting-edge technology. As an important energy storage element of pulse power devices, capacitors account for a large proportion of pulse power devices. As the long-term development direction of the industry, the development of pulse capacitors with high energy storage density, large discharge current, fast discharge spe...

Claims

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Application Information

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IPC IPC(8): C04B35/493C04B35/50C04B41/88
CPCC04B35/493C04B35/50C04B41/009C04B41/5116C04B41/88C04B2235/3227C04B2235/3293C04B2235/3296C04B2235/442C04B2235/6562C04B2235/6567C04B2235/96
Inventor 翟继卫葛广龙黄凯威沈波
Owner TONGJI UNIV
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