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Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group

A technology of resist lower layer and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, photoplate-making process of patterned surface, photosensitive material used in optomechanical equipment, etc., and can solve the problems such as the reduction of etching speed

Pending Publication Date: 2020-06-02
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially for photolithography using EUV as a light source, in order to improve the photolithographic characteristics, it is necessary to introduce a large amount of functional groups with high adhesion to the resist and to add a large amount of photoacid generators to improve the resolution. The decrease in etching rate due to the increase of organic components is a big problem

Method used

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  • Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group
  • Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group
  • Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0213] Add 22.3g of tetraethoxysilane, 6.5g of methyltriethoxysilane, 3.2g of triethoxysilylpropyl diallyl isocyanurate, and 48.5g of acetone into a 300ml flask, A mixed solution of 19.2 g of a 0.2 M nitric acid aqueous solution and 0.32 g of dimethylaminopropyltrimethoxysilane was added dropwise while stirring the mixed solution with a magnetic stirrer. After the addition, the flask was transferred to an oil bath adjusted to 85° C., and refluxed for 240 minutes. Then, 64 g of propylene glycol monomethyl ether was added, and acetone, methanol, ethanol, and water were distilled off under reduced pressure, and concentrated to obtain a hydrolysis-condensation product (polymer) aqueous solution. Furthermore, propylene glycol monomethyl ether was added, and it adjusted so that the solvent ratio may become 100% of propylene glycol monomethyl ether, and the solid residue in 140 degreeC may become 13 weight%. The obtained polymer corresponded to formula (A-1), and the weight average ...

Synthetic example 2

[0215] Add 23.1g of tetraethoxysilane, 6.8g of methyltriethoxysilane, 1.9g of glycidoxypropyltrimethoxysilane, and 48.1g of acetone into a 300ml flask, and stir the mixed solution with electromagnetic A mixed solution of 19.8 g of a 0.2 M nitric acid aqueous solution and 0.32 g of dimethylaminopropyltrimethoxysilane was added dropwise while stirring with an apparatus. After the addition, the flask was transferred to an oil bath adjusted to 85° C., and refluxed for 240 minutes. Then, 64 g of propylene glycol monomethyl ether was added, and acetone, methanol, ethanol, and water were distilled off under reduced pressure, and concentrated to obtain a hydrolysis-condensation product (polymer) aqueous solution. Furthermore, propylene glycol monomethyl ether was added, and it adjusted so that the solvent ratio may become 100% of propylene glycol monomethyl ether, and the solid residue in 140 degreeC may become 13 weight%. The obtained polymer corresponds to the formula (A-2), and th...

Synthetic example 3

[0217] Add 22.6g of tetraethoxysilane, 6.6g of methyltriethoxysilane, 2.7g of phenylsulfonylpropyltriethoxysilane, and 48.4g of acetone into a 300ml flask, and stir the mixed solution by electromagnetic stirring A mixed solution of 19.4 g of a 0.2 M nitric acid aqueous solution and 0.32 g of dimethylaminopropyltrimethoxysilane was added dropwise while stirring with an apparatus. After the addition, the flask was transferred to an oil bath adjusted to 85° C., and refluxed for 240 minutes. Then, 64 g of propylene glycol monomethyl ether was added, and acetone, methanol, ethanol, and water were distilled off under reduced pressure, and concentrated to obtain a hydrolysis-condensation product (polymer) aqueous solution. Furthermore, propylene glycol monomethyl ether was added, and it adjusted so that the solvent ratio may become 100% of propylene glycol monomethyl ether, and the solid residue in 140 degreeC may become 13 weight%. The obtained polymer corresponded to formula (A-3)...

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Abstract

[Problem] To provide a semiconductor device production method employing a resist underlayer film-forming composition that has a high etching rate and that can be removed with a chemical solution aftersubstrate processing. [Solution] Disclosed is a semiconductor device production method comprising a step (G) wherein, after transferring an underlayer by employing a resist underlayer film-forming composition including a hydrolysis condensation product obtained by hydrolyzing and condensing a hydrolyzable silane in a non-alcohol solvent in the presence of a strong acid, a patterned resist film, apatterned resist underlayer film and / or particles are / is removed with a sulfuric acid peroxide mixture (SPM) made by mixing a hydrogen peroxide solution and sulfuric acid and / or an ammonia hydrogen peroxide mixture (SC1) made by mixing a hydrogen peroxide solution and ammonia water. The hydrolyzable silane includes a hydrolyzable silane represented by formula (1): R1 aR2 bSi(R3)4-(a+b). (In formula (1), R1 represents an organic group including a primary amino group, a secondary amino group, or a tertiary amino group, and is bonded to the silicon atom by a Si-C bond.) The hydrolysis condensation product includes an organic group including a salt structure between a counter anion originating from the strong acid and a counter cation originating from a primary ammonium group, a secondary ammonium group, or a tertiary ammonium group.

Description

technical field [0001] It relates to a method of manufacturing a semiconductor device using a composition for forming an underlayer film between a substrate used in the manufacture of a semiconductor device and a resist (for example, photoresist, electron beam resist). Specifically, it relates to a method of manufacturing a semiconductor device using a composition for forming a resist underlayer film for lithography for forming an underlayer film used as an underlayer of a photoresist in a photolithography process of manufacturing a semiconductor device. Moreover, it is related with the manufacturing method of the semiconductor device including the formation method of the resist pattern using this composition for underlayer film formation. Background technique [0002] Conventionally, in the manufacture of semiconductor devices, microfabrication has been performed by photolithography using a photoresist. The above-mentioned microfabrication is to form a thin film of photore...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/26C08G77/388G03F7/11
CPCC08G77/388G03F7/0752G03F7/423G03F7/425G03F7/11G03F7/0755G03F7/26G03F7/422H01L21/3086G03F7/0045G03F7/0757
Inventor 柴山亘服部隼人石桥谦中岛诚
Owner NISSAN CHEM IND LTD
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