Flip LED chip

Abstract

The invention discloses a flip LED chip, which comprises a substrate, an epitaxial layer, a transparent conductive layer, a filling and leveling layer, an adhesive layer, a reflecting layer and an electrode structure, wherein the epitaxial layer is arranged on the substrate; the transparent conductive layer is arranged on the epitaxial layer, the filling and leveling layer is arranged on the transparent conductive layer and fills the concave-convex structure of the epitaxial layer, the filling and leveling layer is provided with a plurality of first holes, the adhesion layer is arranged on thefilling and leveling layer and fills the first holes to form conductive connection with the transparent conductive layer, and the reflecting layer is arranged on the adhesion layer. The filling and leveling layer is formed on the transparent conductive layer of the flip LED chip; the concave-convex structure of the epitaxial layer is filled and leveled up to form a flat surface, and the reflecting layer arranged on the filling and leveling layer forms full mirror reflection, so that light emitted by the epitaxial layer can be emitted from the back surface of the substrate in a centralized manner after being reflected by the reflecting layer, and the light emitting efficiency of the chip is further improved.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a flip-chip LED chip. Background technique [0002] see figure 1 , the existing flip-chip LED chip includes a substrate 10, an epitaxial layer 20 disposed on the front of the substrate 10, an ITO layer 30 disposed on the epitaxial layer 20, a reflective layer 40 disposed on the ITO layer 30, a reflective layer disposed on the reflective layer The insulating layer 50 on the 40, and the electrode 60. In the conventional flip chip, the light emitted from the side of the epitaxial layer 20 facing away from the substrate 10 is reflected by the reflective layer 40 and then emitted from the back side of the substrate 10 . The surface of the general epitaxial layer structure will have unevenness during the process of crystal growth, which will cause the reflective layer 40 plated on the back to form a complete mirror surface, which will cause dispersion of the chip, and t...

AI Technical Summary

Problems solved by technology

The surface of the general epitaxial layer structure will have unevenness during the process of crystal growth, which will cause the reflective layer 40 plated on the back to form a complete mirror surface, which will cause dispersion of the chip, and the light will not be concentrated. After packaging into white light , leading to poor light effect

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