3D memory device and manufacturing method thereof
A manufacturing method and storage device technology, which is applied in the field of memory, can solve problems such as poor device flatness, and achieve the effects of improving flatness, preventing deformation problems, and structural integrity
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[0034] The present invention will be described in more detail below with reference to the accompanying drawings. In the various drawings, the same elements are represented by similar reference numerals. For the sake of clarity, the various parts in the drawings are not drawn to scale. In addition, some well-known parts may not be shown. For the sake of brevity, the semiconductor structure obtained after several steps can be described in one figure.
[0035] It should be understood that when describing the structure of the device, when a layer or region is referred to as being "on" or "above" another layer or another region, it can mean directly on the other layer or region, or It also includes other layers or regions between it and another layer or another region. Moreover, if the device is turned over, the layer or area will be "below" or "below" the other layer or area.
[0036] In order to describe the situation of being directly on another layer and another area, this artic...
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