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A Schottky barrier diode temperature sensor integrated with interdigital structure and its manufacturing method

A technology of temperature sensor and interdigital structure, used in thermometers, thermometers and instruments with directly sensitive electrical/magnetic components, etc., can solve the problems of low sensitivity of diode temperature sensors, and achieve low turn-on voltage and high thermal stability. sexual effect

Active Publication Date: 2021-11-02
宁波铼微半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Solve the technical problem of low sensitivity of the diode in the prior art as a temperature sensor

Method used

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  • A Schottky barrier diode temperature sensor integrated with interdigital structure and its manufacturing method
  • A Schottky barrier diode temperature sensor integrated with interdigital structure and its manufacturing method
  • A Schottky barrier diode temperature sensor integrated with interdigital structure and its manufacturing method

Examples

Experimental program
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Effect test

Embodiment 1

[0040] This embodiment provides a Schottky barrier diode temperature sensor integrated with an interdigitated structure.

[0041] refer to figure 1 , the Schottky barrier diode temperature sensor integrated with the interdigital structure includes a substrate layer 1, a buffer layer 2, n + - GaN layer 3, interdigitated structure and connections; the interdigitated structure contains n - - GaN layer 4, ohmic electrode 6 and Schottky electrode 7; and by pair n - -GaN layer 4, n + -The GaN layer 3 and the buffer layer 2 are etched to achieve device isolation to form two isolated devices; the interdigitated structures are connected through the connection part; the connection method includes series connection, and the series connection is Connections between different isolation devices. It is mainly emphasized that the connection methods are various, and can be selected as needed. The connection method in this embodiment is to connect through gold wires, and can also be connect...

Embodiment 2

[0043] This embodiment provides a Schottky barrier diode temperature sensor integrated with an interdigitated structure.

[0044] refer to figure 2 and image 3The difference between this embodiment and Embodiment 1 is that the connection part in the Schottky barrier diode temperature sensor integrated with the interdigital structure includes a pad electrode 8 and an air bridge electrode 9, and the Schottky barrier diode integrated in the interdigitated structure The base barrier diode temperature sensor further includes a dielectric layer 5, and the dielectric layer is arranged on the n - - Between the GaN layer 4 and the Schottky electrode 7 .

Embodiment 3

[0046] This embodiment provides a Schottky barrier diode temperature sensor integrated with an interdigitated structure.

[0047] refer to Figure 4 and Figure 5 , the difference between this embodiment and Embodiment 2 is that the interdigitated structures are connected in series and in parallel. In addition, different interdigitated structures on the same isolation device are connected in parallel, and interdigitated structures on different isolation devices are connected in series.

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Abstract

The invention relates to a schottky barrier diode temperature sensor integrated with an interdigital structure and a manufacturing method. The diode includes a substrate layer, a buffer layer, n + -GaN layers, interdigitated structures, and connections; the interdigitated structures comprise n ‑ -GaN layer, ohmic electrode and Schottky electrode; the interdigital structures are connected through the connection part; the connection method includes series connection. The temperature sensor is integrated in series through the Schottky barrier diodes of the interdigital structure, which can improve the sensitivity of the temperature sensor; and the integrated Schottky barrier diode temperature sensor of the interdigital structure is compared with the conventional Schottky barrier temperature sensor. The temperature sensitivity of the sensor has been doubled, so that it can effectively detect the ambient temperature.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power device integration, in particular to a Schottky barrier diode temperature sensor integrated with an interdigital structure and a manufacturing method. Background technique [0002] GaN-based devices with low power loss and high switching speed are essential for improving power density and energy efficiency in power electronics applications. Its applications in electric vehicle and smartphone charging stations, photovoltaic inverters, data center power supplies, etc. have numerous advantages. However, severe heat dissipation during on-state conduction and on / off switching cycles results in high junction temperatures, which greatly degrade safe and reliable operation. [0003] However, the temperature detection of existing GaN-based power devices mainly adopts a single circular structure of titanium nitride Schottky diode or pn junction diode, and its temperature sensitivity is relative...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/108H01L31/0224H01L31/18G01K7/00
CPCG01K7/00H01L31/022408H01L31/108H01L31/18Y02P70/50
Inventor 敖金平李小波李柳暗蒲涛飞
Owner 宁波铼微半导体有限公司
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