Method for constructing forward current gain degradation model of bipolar transistor in radiation environment

Abstract

The invention discloses a method for constructing a forward current gain degradation model of a bipolar transistor in a radiation environment. The method comprises the following steps of: a) obtainingthe concentration nE of minority carriers injected into a base region from an emitter region based on emitter current under a large injection condition; b) obtaining distribution of base current andcurrent gain; c) establishing a radiation environment forward current gain degradation model; and d) model verification. According to the model constructed by the invention, the influence of a large injection effect is mainly considered, so that the degradation of the forward current gain of the bipolar transistor can be accurately calculated, and the degradation of a forward current gain damage factor in a full bias range is obtained; few fitting parameters are needed, the applicability is wide, and the model provides more accurate prediction for the reliability of the bipolar transistor in the radiation environment.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for constructing a bipolar transistor forward current gain degradation model in a radiation environment. Background technique [0002] With the continuous extension of space exploration, more and more electronic systems will be applied in various radiation environments. Space radiation effects can cause varying degrees of damage to electronic devices, leading to system failures. Bipolar transistors have strong radiation resistance and have shown great application prospects in space radiation environments in recent years. Space radiation, especially neutron radiation and heavy ion radiation, produces a large amount of displacement damage inside semiconductor materials and devices, which increases the probability of carrier scattering and reduces the lifetime of carriers. As a minority carrier device, the reduction of the minority carrier lifetime in t...

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Problems solved by technology

In addition, when the transistor works in the forward active mode, the higher BE junction bias will make the concentration of minority carriers injected from the emitter region into the base region may approach or even exceed the majority carrier concentration of the base region, that is, Large injection effect degrades transistor current gain

The classic Messenger Spratt model ignores the influence of large injection effects, and there are limitations in characterizing the degradation of forward current gain of bipolar transistors under high bias voltage

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